IRFS8 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	AUIRFS8409-7P Infineon	1	MOSFET N-Ch 40V 522A Automotive D2PAK-6 International Rectifier AUIRFS8409-7P N-channel MOSFET Transistor, 240 A, 522 A, 40 V, 7-Pin D2PAK	Other	AUIRFS8409-7P	3D model not available Symbol and footprint available 2	1 Download Model
	AUIRFS8407-7P Infineon	1	International Rectifier AUIRFS8407-7P N-channel MOSFET Transistor, 240 A, 306 A, 40 V, 7-Pin D2PAK	Other	AUIRFS8407-7P	3D model not available Symbol and footprint available 2	1 Download Model
	AUIRFS8409-7TRL Infineon	1	MOSFET Auto 40V N-Ch FET 0.97mOhm 195A	Other	AUIRFS8409-7TRL	3D model available Symbol and footprint available 3	1 Download Model
	IRFS830B Rochester Electronics LLC	1	4.5A, 500V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN		IRFS830B	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS820 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS820	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS830A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS820A Samsung Semiconductor	1	Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS820A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS832 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.5A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS832	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS830	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS840BT Rochester Electronics LLC	1	8A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN		IRFS840BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830B Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS830B	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS840A Samsung Semiconductor	1	Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS840A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS823 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.2A I(D), 450V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS823	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS820BT Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS820BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS842 Samsung Semiconductor	1	Power Field-Effect Transistor, 4A I(D), 500V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS842	3D model not available Symbol and footprint not available 0	0 Build or Request

	IRFS840BT Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS840BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS822 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS822	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830-SM-C Taitron Components Inc	1	Power Field-Effect Transistor		IRFS830-SM-C	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS821 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.1A I(D), 450V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS821	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS831 Samsung Semiconductor	1	Power Field-Effect Transistor, 3.1A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS831	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS833 Samsung Semiconductor	1	Power Field-Effect Transistor, 2.5A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB		IRFS833	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830BT Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS830BT	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS830A Samsung Semiconductor	1	Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS830A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS820A Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		IRFS820A	3D model not available Symbol and footprint not available 0	0 Build or Request
	IRFS820B Rochester Electronics LLC	1	2.5A, 500V, 2.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN		IRFS820B	3D model not available Symbol and footprint not available 0	0 Build or Request
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