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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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IRLML6401 International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401 0 Build or Request
Part Image Part Image 1 IRLML6401 0 Build or Request
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IRLML6401 Shenzhen Heketai Electronics Co Ltd
1 P-channel MOSFET with -30V drain-source voltage, -4A continuous drain current, and 52mΩ on-resistance at VGS=-10V, suitable for PWM and load switch applications in SOT-23 package. IRLML6401 0 Build or Request
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IRLML6401 UMW(Youtai Semiconductor Co., Ltd.)
0 MOSFET P Channel 12V 4.3A 950mV @ 250uA 50mΩ @ 4.3A,4.5V SOT-23 RoHS SOT23 (3-Pin) IRLML6401 1 Download Model
Part Image Part Image 1 Infineon IRLML6401GTRPBF P-channel MOSFET, 4.3 A, 12 V HEXFET, 3-Pin SOT-23 SOT23 (3-Pin) IRLML6401GTRPBF 1 Download Model
Part Image Part Image 1 INFINEON - IRLML6401PBF - MOSFET Transistor, P Channel, -4.3 A, -12 V, 0.05 ohm, -4.5 V, -550 mV SOT23 (3-Pin) IRLML6401PBF 1 Download Model
Part Image Part Image 1 INFINEON - IRLML6401TRPBF - MOSFET, P, MICRO3 SOT23 (3-Pin) IRLML6401TRPBF 1 Download Model
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IRLML6401GPBF Infineon Technologies AG
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401GPBF 0 Build or Request
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IRLML6401TR CYT Opto-electronic
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401TR 0 Build or Request
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IRLML6401TRPBF-1 Infineon Technologies AG
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401TRPBF-1 0 Build or Request
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IRLML6401GTRPBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401GTRPBF 0 Build or Request
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IRLML6401TR International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401TR 0 Build or Request
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IRLML6401PBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401PBF 0 Build or Request
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IRLML6401TRPBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401TRPBF 0 Build or Request
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IRLML6401TRPBF-1 International Rectifier
1 Power Field-Effect Transistor IRLML6401TRPBF-1 0 Build or Request
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IRLML6401GPBF International Rectifier
1 Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB IRLML6401GPBF 0 Build or Request
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IRLML6401GTRPBF VBsemi Electronics Co Ltd
1 P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 35 mΩ at VGS = -10 V, designed for load switch, PA switch, and DC/DC converter applications. IRLML6401GTRPBF 0 Build or Request
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IRLML6401TRPBF VBsemi Electronics Co Ltd
1 P-Channel 20-V, 5-A MOSFET in SOT-23 package with RDS(on) of 0.035 ohm at VGS = -10 V, suitable for load switches, PA switches, and DC/DC converters. IRLML6401TRPBF 0 Build or Request
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