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LA265-50075-SA2
Crystal IS
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1 | Ultraviolet (UV) Emitter 265nm (260nm ~ 270nm) 6.1V 500mA 130° 1414 (3535 Metric) | Other | LA265-50075-SA2 |
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LA265-50062-SA1
Crystal IS
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1 | Ultraviolet (UV) Emitter 265nm (260nm ~ 270nm) 6.1V 500mA 130° 1414 (3535 Metric) | Other | LA265-50062-SA1 |
3
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1442320
KLARAN
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1 | Crystal SMD TF 8038 32.768KHz 6pF 20ppm EXT | Other | 1442320 |
3
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ISK018NE1LM7AULA1
Infineon
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1 | MOSFET TRENCH <= 40V | Other | ISK018NE1LM7AULA1 |
3
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AAT3670ISK-4.2-T1
Skyworks
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1 | Charger IC Lithium Ion/Polymer 24-QFN (4x4) | Quad Flat No-Lead | AAT3670ISK-4.2-T1 |
3
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B08B-PNISK-1A
JST (JAPAN SOLDERLESS TERMINALS)
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1 | Connector Header Through Hole 8 position 0.079" (2.00mm) | Other | B08B-PNISK-1A |
3
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12.90328
Geyer
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1 | 16 MHz XO (Standard) CMOS Oscillator 3.3V Enable/Disable 4-SMD, No Lead | Other | 12.90328 |
3
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12.87159
Geyer
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1 | SMD Quartz Crystal | Other | 12.87159 |
2
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ISK0503A
XP POWER
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1 | DC/DC Converter Isolated 3.3V 0.25W | Other | ISK0503A |
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ISK0505A
XP POWER
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1 | XP Power Surface Mount 0.25W Isolated DC-DC Converter, Vin 4.5 → 5.5 V dc, I/O isolation 1.5kV dc, Vout 5V dc | Other | ISK0505A |
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ISK036N03LM5AULA1
Infineon
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1 | OptiMOS™ 5 power MOSFET 30 V, 3.6 mΩ, smallest form factor in PQFN 2x2 package | Other | ISK036N03LM5AULA1 |
3
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12.87160
Geyer
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1 | Crystal 0.032768MHz ±20ppm (Tol) 13.5pF FUND 70000Ohm 2-Pin SMD T/R | Other | 12.87160 |
3
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ISK2405A
XP POWER
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1 | XP Power Surface Mount 0.25W Isolated DC-DC Converter, Vin 21.6 → 26.4 V dc, I/O isolation 1.5kV dc, Vout 5V dc | Other | ISK2405A |
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ISK024NE2LM5AUSA1
Infineon
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1 | MOSFET TRENCH <= 40V | Other | ISK024NE2LM5AUSA1 |
3
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12.95139
Geyer
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1 | Clock Oscillator SMD-version +3,3V | Other | 12.95139 |
3
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ISK024NE2LM5
Infineon
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1 | Power MOSFET, N Channel, 25 V, 55 A, 0.0019 ohm, DFN2020, Surface Mount | Other | ISK024NE2LM5 |
3
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ISK057N04LM6ATLA1
Infineon
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1 | Power Switch/Driver 1:1 PG-VSON-6-1 | Other | ISK057N04LM6ATLA1 |
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ISK018NE1LM7ATSA1
Infineon
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1 | N-Channel 15 V 30A (Ta), 129A (Tc) 2.1W (Ta), 39W (Tc) Surface Mount PG-VSON-6-1 | Other | ISK018NE1LM7ATSA1 |
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12.95059
Geyer
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1 | Oscillator XO 66MHz ±50ppm 15pF HCMOS 60% 3.3V 4-Pin SMD T/R | Other | 12.95059 |
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12.95565
Geyer
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1 | Oscillator XO 1.8432MHz ±50ppm 15pF HCMOS 60% 1.8V/2.5V/3.3V 4-Pin SMD T/R | Other | 12.95565 |
3
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R1Q4A7236ABB-33IB1
Renesas Electronics
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1 | The R1Q4A7236 is a 2, 097, 152-word by 36-bit and the R1Q4A7218 is a 4, 194, 304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, low | BGA | R1Q4A7236ABB-33IB1 |
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RMQSDA3636DGBA-182#AC0
Renesas Electronics
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1 | The RMQSDA3636DGBA is a 1, 048, 576-word by 36-bit and the RMQSDA3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQSDA3636DGBA-182#AC0 |
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RMQS3A1818DGBA-302#AC0
Renesas Electronics
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0 | The RMQS3A1836DGBA is a 524, 288-word by 36-bit and the RMQS3A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS3A1818DGBA-302#AC0 |
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R1QDA4418RBG-18IB0
Renesas Electronics
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1 | The R1QDA4436RBG is a 4, 194, 304-word by 36-bit and the R1QDA4418RBG is a 8, 388, 608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed, | BGA | R1QDA4418RBG-18IB0 |
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R1QBA4436RBG-18IB0
Renesas Electronics
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1 | The R1QBA4436RBG is a 4, 194, 304-word by 36-bit and the R1QBA4418RBG is a 8, 388, 608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Spee | BGA | R1QBA4436RBG-18IB0 |
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