MBRA2 Model Download Search Results
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MBRA2H100T3G
onsemi
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1 | Compact Package with J-Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guard-Ring for Overvoltage Protection; Low Forward Voltage Drop; This is a Pb-Free Device Mechanical Characteristics:; Case: Molded Epoxy; Epoxy Meets UL 94 V-0 @ 0.125 in; Weight: 70 mg (approximately); Cathode Polarity Band; Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; | Diodes Moulded | MBRA2H100T3G |
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MBRA210LT3G
onsemi
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1 | Ultra Low VF; 1st in the Market Place with a 10 VR Schottky Rectifier; Compact Package with J–Bend Leads Ideal for Automated Handling; Highly Stable Oxide Passivated Junction; Guardring for Over-Voltage Protection; Optimized for Low Forward Current; Mechanical Characteristics: Case: Molded Epoxy; Epoxy Meets UL94, VO at 1/8"; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes | Diodes Moulded | MBRA210LT3G |
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MBRA210ET3G
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 10V V(RRM), Silicon | MBRA210ET3G |
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MBRA210LT3
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 10V V(RRM), Silicon | MBRA210LT3 |
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MBRA210ET3
Rochester Electronics LLC
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1 | 2 A, 10 V, SILICON, RECTIFIER DIODE, PLASTIC, CASE 403D-02, SMA, 2 PIN | MBRA210ET3 |
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MBRA210ET3
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 10V V(RRM), Silicon | MBRA210ET3 |
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