Showing 19 of 19 results
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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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MBRA320T3G
onsemi
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1 | Small Compact Surface Mountable Package with J-Bent Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Very Low Forward Voltage Drop; Guardring for Stress Protection; Pb-Free Package is Available Mechanical Characteristics :; Case: Epoxy, Molded; Weight: 70 mg (approximately); Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Lead and Mounting Surface Temperature for Soldering Purposes:260C Max. for 10 Seconds; Shipped in 12 | Diodes Moulded | MBRA320T3G |
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MBRA340T3G
onsemi
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1 | Compact Surface Mountable Package with J-Bent Leads; Rectangular Package for Automated Handling; Highly Stable Oxide Passivated Junction; Very Low Forward Voltage Drop; Guardring for Stress Protection; All External Surfaces are Corrosion Resistant and Terminal Leads are Readily Solderable; Cathode Lead Indicated by polarity Band; ESD Ratings, Machine Model = C, Human Body Model = 3B; Device Meets MSL 1 Requirements; AEC-Q101 Qualified and PPAP Capable; NRVBA Prefix for Automotive and Other Applications Requ | Diodes Moulded | MBRA340T3G |
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MBRA340
Galaxy Microelectronics
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon | MBRA340 |
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MBRA390
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and operating junction temperature from -65 to +125°C. | MBRA390 |
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MBRA340
EIC Semiconductor Inc
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-214AC | MBRA340 |
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MBRA320
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0A average rectified current, 20-100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and non-repetitive peak surge current capability, housed in SMA (DO-214AC) package. | MBRA320 |
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MBRA3045N
Fairchild Semiconductor Corporation
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon | MBRA3045N |
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MBRA380
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.50 to 0.85 V at 2.0 A, and operating junction temperature from -65 to +125°C. | MBRA380 |
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MBRA340
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and non-repetitive peak surge current capability, housed in SMA (DO-214AC) package. | MBRA340 |
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MBRA340T3
onsemi
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon | MBRA340T3 |
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MBRA3045NTU
Rochester Electronics LLC
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1 | 30 A, 45 V, SILICON, RECTIFIER DIODE, LEAD FREE, TO-3P, 3 PIN | MBRA3045NTU |
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MBRA3045NTU
Fairchild Semiconductor Corporation
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1 | Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 45V V(RRM), Silicon | MBRA3045NTU |
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MBRA3100
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.50 to 0.85 V at 2.0 A, and operating junction temperature from -65 to +125 °C. | MBRA3100 |
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MBRA350
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode in SMA (DO-214AC) package, 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop, operating junction temperature from -65 to +125°C. | MBRA350 |
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MBRA360
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.70 V at 2.0 A, and non-repetitive peak surge current capability, suitable for high reliability applications. | MBRA360 |
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MBRA330
SUNMATE electronic Co., LTD
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1 | Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.50 to 0.85 V at 2.0 A, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode in SMA (DO-214AC) package, 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop, operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode with 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and operating junction temperature from -65 to +125°C.Surface mount Schottky barrier diode with 3.0A average rectified current, 20 to 100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and non-repetitive peak surge current capability, housed in SMA (DO-214AC) package.Surface mount Schottky barrier diode with 3.0A average rectified current, 20-100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and non-repetitive peak surge current capability, suitable for high reliability applications.Surface mount Schottky barrier diode with 3.0A average rectified current, 20-100V DC blocking voltage, low forward voltage drop of 0.50 to 0.85V at 2.0A, and non-repetitive peak surge current capability, housed in SMA (DO-214AC) package.Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.50 to 0.85 V at 2.0 A, and operating junction temperature from -65 to +125 °C.Surface mount Schottky barrier diode with 3.0 A average rectified current, 20 to 100 V DC blocking voltage, low forward voltage drop of 0.70 V at 2.0 A, and non-repetitive peak surge current capability, suitable for high reliability applications. | MBRA330 |
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TMBRA340
Galaxy Microelectronics
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1 | Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon | TMBRA340 |
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NRVBA340NT3G
onsemi
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1 | Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V | NRVBA340NT3G |
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NRVBA340T3G
onsemi
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1 | SMT Schottky Diode, 40V 3A, 2-pin SMA | Diodes Moulded | NRVBA340T3G |
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