MJD117T4 Model Download Search Results
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MJD117T4
Continental Device India Ltd
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin | MJD117T4 |
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MJD117T4
STMicroelectronics
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1 | Bipolar (BJT) Transistor PNP - Darlington 100 V , 2 A, 25MHz 20 W Surface Mount DPAK, 20µA, 20 W, -65 °C to 150 °C | Other | MJD117T4 |
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MJD117T4
onsemi
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117T4 |
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MJD117T4
Motorola Semiconductor Products
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | MJD117T4 |
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MJD117T4G
onsemi
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1 | Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc; Monolithic Construction With Built-in Base-Emitter Shunt Resistors; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Straight Lead Version in Plastic Sleeves ("1" Suffix); Surface Mount Replacements for TIP110-TIP117 Series; Complementary Pairs Simplifies Designs; NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q | Other | MJD117T4G |
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NJVMJD117T4G
onsemi
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1 | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin | NJVMJD117T4G |
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![Part Image](["https://componentsearchengine.com/Images/9/MJD117T4.jpg",null,"//content.supplyframe.com/images/process/fit-in/100x100/p/to252_3.jpg"])
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