MJD24 Model Download Search Results

Showing 15 of 15 results

Price & Stock Powered by

Filter by Manufacturer

Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MJD243T4G onsemi	1	High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA	Other	MJD243T4G	3D model available Symbol and footprint available 3	1 Download Model
	MJD243 onsemi	1	Obsolete - 4.0 A, 100 V NPN Bipolar Power Transistor	Other	MJD243	3D model available Symbol and footprint available 3	1 Download Model
	NJVMJD243T4G onsemi	1	High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA	Other	NJVMJD243T4G	3D model not available Symbol and footprint available 2	1 Download Model
	MJD243-1 onsemi	1	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin		MJD243-1	3D model not available Symbol and footprint not available 0	0 Build or Request

	MJD243T4 onsemi	1	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin		MJD243T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243 Freescale Semiconductor	1	TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252		MJD243	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243-1 Motorola Semiconductor Products	1	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin		MJD243-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243-1 Freescale Semiconductor	1	TRANSISTOR,BJT,NPN,100V V(BR)CEO,1A I(C),TO-251		MJD243-1	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243RL Motorola Semiconductor Products	1	Power Bipolar Transistor		MJD243RL	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243 Rochester Electronics LLC	1	4A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3		MJD243	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243 Motorola Semiconductor Products	1	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin		MJD243	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243T4 Motorola Semiconductor Products	1	Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin		MJD243T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243T4 Freescale Semiconductor	1	TRANSISTOR,BJT,NPN,100V V(BR)CEO,4A I(C),TO-252		MJD243T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243T4 Rochester Electronics LLC	1	4A, 100V, NPN, Si, POWER TRANSISTOR, PLASTIC, CASE 369C-01, DPAK-3		MJD243T4	3D model not available Symbol and footprint not available 0	0 Build or Request
	MJD243G onsemi	1	High Current-Gain-Bandwith Product - fT = 40MHz (Min) @ IC = 100 mAdc; Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix); Collector-Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc; Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Adc; Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix); Straight Lead Version in Plastic Sleeves ("-1" Suffix); High DC Current Gain hFE = 40 (Min) @ IC= 200 mA		MJD243G	3D model available Symbol and footprint not available 1	1 Download Model

Can't find what you're looking for? Request this part