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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	MURF1640CTH Taiwan Semiconductor	1	Bridge Rectifiers 50ns, 16A, 400V, High Efficient Recovery Rectifier	Transistor Outline, Vertical	MURF1640CTH	3D model available Symbol and footprint available 3	1 Download Model
	MURF1660CTG onsemi	1	Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; UL Recognized File #E69369 Mechanical Characteristics:; Epoxy Meets UL94, VO @ 1/8"; Current Derating @ Both Case and Ambient Temperatures; Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds; Weight: 1.9 grams (approximately); Ultrafast 60 Nanosecond Recovery Times; Marking: U1660; Low Leakage Specified @ 150°C Case Temperature; High Temperature Glass Passivated Junction; Case: Epoxy, Molded; Electri	Transistor Outline, Vertical	MURF1660CTG	3D model available Symbol and footprint available 3	1 Download Model
	MURF860G onsemi	1	Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Epoxy Meets UL94, VO @ 1/8"; 175 C Operating Junction Temperature; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Case: Epoxy, Molded; Low Forward Voltage; Ultrafast 25, 50 and 75 Nanosecond Recovery Time; Weight: 1.9 grams (approximately); Reverse Voltage to 600 Volts Mechanical Characteristics:; Low Leakage Current; AEC-Q101 Qualified and PPAP Capable; SUR8 Prefix for Automotive and Other Appl	Other	MURF860G	3D model available Symbol and footprint available 3	1 Download Model
	MURF1660CTH Taiwan Semiconductor	1	Rectifiers 50ns, 16A, 600V, High Efficient Recovery Rectifier	Transistor Outline, Vertical	MURF1660CTH	3D model available Symbol and footprint available 3	1 Download Model

	MURF3JB-TP MCC	1	Planar Structure Die and Soft Recovery Characteristics• Super Fast Reverse Recovery Time• Lead Free Finish/RoHS Compliant (Note 1)("P" Suffix DesignatesRoHS Compliant. See Ordering Information)• Epoxy Meets UL 94 V-0 Flammability Rating• Halogen Free. "Green" Device (Note 2)• Moisture Sensitivity Level 1	Diodes Moulded	MURF3JB-TP	3D model available Symbol and footprint available 3	1 Download Model
	MURF1560G onsemi	1	175 C Operating Junction Temperature; Low Forward Drop; Ultrafast 35 and 60 Nanosecond Recovery Time; High Voltage Capability to 600 Volts; Low Leakage Specified @ 150 C Case Temperature; Lead Temperature for Soldering Purposes: 260 C Max. for 10 Seconds; Case: Epoxy, Molded; Current Derating Specified @ Both Case and Ambient Temperatures Mechanical Characteristics:; Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable; Weight: 1.9 grams (approximately); AEC-Q101 Quali	Other	MURF1560G	3D model available Symbol and footprint available 3	1 Download Model
	MU-RFTW-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFTW-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFM6-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFM6-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFSM-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFSM-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFM6-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFM6-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFDS-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFDS-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFRS-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFRS-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFTL-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFTL-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFRS-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFRS-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFM5-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFM5-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request

	MU-RFLE-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFLE-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFDS-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFDS-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFSM-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFSM-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFM5-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFM5-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFTL-P-001 Methode Electronics Inc	1	Interconnection Device		MU-RFTL-P-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFLE-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFLE-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MU-RFTW-J-001 Methode Electronics Inc	1	Interconnection Device		MU-RFTW-J-001	3D model not available Symbol and footprint not available 0	0 Build or Request
	MURF3060CT Won-Top Electronics Co Ltd	1	Rectifier Diode, 1 Phase, 2 Element, 15A, 600V V(RRM), Silicon, TO-220AB		MURF3060CT	3D model not available Symbol and footprint not available 0	0 Build or Request
	MURF20010 Daco Semiconductor Co Ltd	1	Rectifier Diode, 1 Phase, 2 Element, 100A, 100V V(RRM), Silicon		MURF20010	3D model not available Symbol and footprint not available 0	0 Build or Request
	MURF1515-LF Won-Top Electronics Co Ltd	1	Rectifier Diode, 1 Phase, 1 Element, 15A, 150V V(RRM), Silicon, TO-220AC		MURF1515-LF	3D model not available Symbol and footprint not available 0	0 Build or Request
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