NDT01 Footprint, Symbol and 3D Model search results

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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	NDT014L onsemi	1	2.8 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 4.5 V, RDS(ON) = 0.16 Ω @ VGS = 10 V. ; High density cell design for extremely lowRDS(ON).; High power and current handling capability in a widely used surface mount package.	SOT223 (3-Pin)	NDT014L	3D model available Symbol and footprint available 3	1 Download Model
	PNDT012A0X3-SRZ OmniOn Power	1	12 A n-isolated DCDC converter, 3-14.4 Vin, 0.45-5.5 Vout, digital	Other	PNDT012A0X3-SRZ	3D model available Symbol and footprint available 3	1 Download Model
	NDT01N60T1G onsemi	1	Power Field-Effect Transistor, 0.4A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA		NDT01N60T1G	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014LL84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014LL84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	NDT014S62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261		NDT014S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L/J23Z Texas Instruments	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014L/J23Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014/L99Z Texas Instruments	1	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014/L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014LJ23Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014LJ23Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014_NL Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014_NL	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L/D84Z Texas Instruments	1	2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014L/D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261		NDT014L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L/L99Z Texas Instruments	1	2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014L/L99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014 Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L Texas Instruments	1	2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014J23ZD84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014J23ZD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request

	NDT014LS62Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261		NDT014LS62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014/S62Z Texas Instruments	1	2.7A, 60V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014/S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014D84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014D84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014LD84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014LD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014 onsemi	1	2.7 A, 60 V. RDS(ON) = 0.2 Ω @ VGS = 10V ; High power and current handling capability in a widely used surface mount package.; High density cell design for extremely lowRDS(ON).		NDT014	3D model available Symbol and footprint not available 1	1 Download Model
	NDT014L/S62Z Texas Instruments	1	2.6A, 60V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-261		NDT014L/S62Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014L Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014L	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014J23Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014J23Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014LJ23ZD84Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET		NDT014LJ23ZD84Z	3D model not available Symbol and footprint not available 0	0 Build or Request
	NDT014LL99Z Fairchild Semiconductor Corporation	1	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.2ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261		NDT014LL99Z	3D model not available Symbol and footprint not available 0	0 Build or Request
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