NSI66 Model Download Search Results
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NSI6601B-DSPR
NOVOSENSE
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1 | Single-channel Isolated Gate Driver 9V SOP8 | Small Outline Packages | NSI6601B-DSPR |
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NSI6602B-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching.The NSi6602 provides 2500Vrms isolation per UL1577 in5-mm x 5-mm LGA13 package, 3000Vrms isolation inSOP16 (150mil) package, and 5700Vrms isolation inSOP16 (300mil) or SOP14 (300mil) package. Systemrobustness is supported by | Small Outline Packages | NSI6602B-Q1SPNR |
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NSI6602B-Q1SWR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver, DIN VDE V 0884-11:2017-01, 4A, 2.7 - 5.5V | Small Outline Packages | NSI6602B-Q1SWR |
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NSI6602A-DSWR
NOVOSENSE
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1 | 2.7V to 5.5V 4A/6A High Reliability Isolated Dual-Channel Gate Driver SOW16 | Small Outline Packages | NSI6602A-DSWR |
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NSI6602A-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching | Small Outline Packages | NSI6602A-Q1SPNR |
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NSI6602B-DLAR
NOVOSENSE
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1 | Half Bridge MOSFET 6A 7V~25V 4A LGA-13-300mil Gate Drive ICs ROHS | Other | NSI6602B-DLAR |
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NSI6602C-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drive , 1500 V ,5A ,2.7V to 5.5V , -40℃~125℃ | Small Outline Packages | NSI6602C-Q1SPNR |
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NSI6602A-DLAR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver 2.5kVrms, 6V, -40 to 125℃, non automotive, package LGA13 | Other | NSI6602A-DLAR |
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NSI6602B-DSWR
NOVOSENSE
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1 | High Reliability Isolated Dual-ChannelGate Driver | Small Outline Packages | NSI6602B-DSWR |
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NSI6602B-DSPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching.The NSi6602 provides 2500Vrms isolation per UL1577 in5-mm x 5-mm LGA13 package, 3000Vrms isolation inSOP16 (150mil) package, and 5700Vrms isolation inSOP16 (300mil) or SOP14 (300mil) package. Systemrobustness is supported by | Small Outline Packages | NSI6602B-DSPNR |
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NSI6602A-Q1SWR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel | Small Outline Packages | NSI6602A-Q1SWR |
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NSI6651ALC-DSWR
NOVOSENSE
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1 | 5.7kVRMS withstand isolation voltage SiC MOSFETs and IGBTs up to 2121Vpk Driver side supply voltage: up to 32V with UVLO 10A peak source and sink output current High CMTI: ±150kV/us 200ns fast response time of DESAT Monitor status of device on FLT and RDY 80ns typical propagation delay 400mA soft turn off current 30ns maximum pulse width distortion Internal miller clamp Active short circuit protection Operation ambient temperature: -40°C ~125°C RoHS & REACH Compliant | Small Outline Packages | NSI6651ALC-DSWR |
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NSI6602C-DLAR
NOVOSENSE
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1 | 2.7V to 5.5VHigh Reliability Isolated Dual-Channel Gate Driver LGA13 | Other | NSI6602C-DLAR |
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NSI6602VA-DLAR
NOVOSENSE
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1 | Second-generation High-performance Isolated Dual-channel Gate Driver | Other | NSI6602VA-DLAR |
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NSI6601AEC-DSWVR
NOVOSENSE
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1 | NSI6601xE: Isolated Gate Driver with Single Channel, ±10A Peak Source/Sink Current, Integrated Miller Clamp or Split Output | Small Outline Packages | NSI6601AEC-DSWVR |
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NSI6622A-DLAR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver LGA13 | Other | NSI6622A-DLAR |
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NSI6601MC-DSWVR
NOVOSENSE
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1 | Isolated single-channel driver Miller Clamp options (NSI6601MB/MC/WC) Input side supply voltage: 3.1V to 17V Driver side supply voltage: up to 32V with 9V, and 12VUVLO options 5A peak source and sink output current Minimum CMTI: ±150kV/μs 80ns typical propagation delay Operation ambient temperature: -40°C ~125°C RoHS & REACH compliant Lead-free component, suitable for lead-free solderingprofile: 260 °C ,MSL3 | Small Outline Packages | NSI6601MC-DSWVR |
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NSI6602VD-Q1SPOR
NOVOSENSE
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1 | Gate Driver Capacitive Coupling 3000Vrms 1 Channel 8-SOIC | Other | NSI6602VD-Q1SPOR |
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NSI6601C-DSWVR
NOVOSENSE
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1 | sop-8 | Small Outline Packages | NSI6601C-DSWVR |
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NSI6622VA-Q1SWKR
NOVOSENSE
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1 | Automobile-qualified High-reliability Isolated Dual-channel Gate Drivers without DT Pins | Other | NSI6622VA-Q1SWKR |
3
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NSI6601AEC-Q1SPR
NOVOSENSE
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1 | Single-Channel Isolated Gate Driver | Small Outline Packages | NSI6601AEC-Q1SPR |
2
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NSI6602C-DSWKR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver | Other | NSI6602C-DSWKR |
3
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NSI6602MEF-Q1SWDR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver 18V,-40°C ~125°C,SOW18 | Other | NSI6602MEF-Q1SWDR |
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NSI6602MED-Q1SWDR
NOVOSENSE
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1 | NSI6602MED-Q1SWDR High Reliability Isolated Dual-Channel Gate Driver, supply voltage 3V to 18V, 10A, ±200kV/μs, -40°C to 125°C | Other | NSI6602MED-Q1SWDR |
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NSI6602VB-DSWKR
NOVOSENSE
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1 | Gate Driver Capacitive Coupling 5700Vrms 2 Channel 14-SOIC,-40°C ~ 125°C,8.9V ~ 25V,6A, 8A | Other | NSI6602VB-DSWKR |
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