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NSI6601B-DSPR
NOVOSENSE
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1 | Single-channel Isolated Gate Driver 9V SOP8 | Small Outline Packages | NSI6601B-DSPR |
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NSI6602B-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching.The NSi6602 provides 2500Vrms isolation per UL1577 in5-mm x 5-mm LGA13 package, 3000Vrms isolation inSOP16 (150mil) package, and 5700Vrms isolation inSOP16 (300mil) or SOP14 (300mil) package. Systemrobustness is supported by | Small Outline Packages | NSI6602B-Q1SPNR |
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NSI6602C-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching. | Small Outline Packages | NSI6602C-Q1SPNR |
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NSI6602A-DSWR
NOVOSENSE
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1 | 4A/6A半桥驱动, 6V ULVO | Small Outline Packages | NSI6602A-DSWR |
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NSI6602B-Q1SWR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver, DIN VDE V 0884-11:2017-01, 4A, 2.7 - 5.5V | Small Outline Packages | NSI6602B-Q1SWR |
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NSI6602A-Q1SPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching | Small Outline Packages | NSI6602A-Q1SPNR |
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NSI6602B-DLAR
NOVOSENSE
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1 | Half Bridge MOSFET 6A 7V~25V 4A LGA-13-300mil Gate Drive ICs ROHS | Other | NSI6602B-DLAR |
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NSI6602A-DLAR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver 2.5kVrms, 6V, -40 to 125℃, non automotive, package LGA13 | Other | NSI6602A-DLAR |
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NSI6602A-Q1SWR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel | Small Outline Packages | NSI6602A-Q1SWR |
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NSI6602B-DSWR
NOVOSENSE
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1 | High Reliability Isolated Dual-ChannelGate Driver | Small Outline Packages | NSI6602B-DSWR |
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NSI6602B-DSPNR
NOVOSENSE
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1 | NSi6602 is a family of high reliability isolated dualchannel gate driver ICs which can be designed to drivepower transistor up to 2MHz switching frequency. Eachoutput could source 4A and sink 6A peak current withfast 25ns propagation delay and 5ns maximum delaymatching.The NSi6602 provides 2500Vrms isolation per UL1577 in5-mm x 5-mm LGA13 package, 3000Vrms isolation inSOP16 (150mil) package, and 5700Vrms isolation inSOP16 (300mil) or SOP14 (300mil) package. Systemrobustness is supported by | Small Outline Packages | NSI6602B-DSPNR |
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NSI6602MC-DSWTR
NOVOSENSE
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1 | High Reliability Isolated Dual-ChannelWith Miller Clamp Gate Driver | Other | NSI6602MC-DSWTR |
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NSI6602VB-Q1SWR
NOVOSENSE
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1 | Isolated dual channel driver Input side supply voltage: 3V to 18V Driver side supply voltage: up to 25V with UVLO 6A peak source and 8A peak sink output High CMTI: ±150kV/us typical 33ns typical propagation delay 6ns maximum delay matching 9ns maximum pulse width distortion Programmable deadtime Accepts minimum input pulse width 20ns Operation temperature: -40℃~125℃ AEC-Q100 (Grade 1) qualified for auto-motiveApplication RoHS & REACH Compliance | Small Outline Packages | NSI6602VB-Q1SWR |
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NSI6602B-DSWKR
NOVOSENSE
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1 | High-reliability Isolated Dual-channel Gate Drivers with DT Pins Input power supply voltage: 2.7V to 5.5V Peak source and sink current: 4A/6A | Other | NSI6602B-DSWKR |
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NSI6601MC-Q1SPR
NOVOSENSE
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1 | 1-CHANNEL ISO GATE DRIVER | Small Outline Packages | NSI6601MC-Q1SPR |
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NSI6601MC-Q1SWVR
NOVOSENSE
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1 | 1-CHANNEL ISO GATE DRIVER | Small Outline Packages | NSI6601MC-Q1SWVR |
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NSI6651ALC-DSWR
NOVOSENSE
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1 | 5.7kVRMS withstand isolation voltage SiC MOSFETs and IGBTs up to 2121Vpk Driver side supply voltage: up to 32V with UVLO 10A peak source and sink output current High CMTI: ±150kV/us 200ns fast response time of DESAT Monitor status of device on FLT and RDY 80ns typical propagation delay 400mA soft turn off current 30ns maximum pulse width distortion Internal miller clamp Active short circuit protection Operation ambient temperature: -40°C ~125°C RoHS & REACH Compliant | Small Outline Packages | NSI6651ALC-DSWR |
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NSI6602C-DLAR
NOVOSENSE
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1 | Half Bridge MOSFET 6A 7V~25V 4A SOP-16-300mil Gate Drive ICs ROHS | Other | NSI6602C-DLAR |
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NSI6602VA-DSPNR
NOVOSENSE
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1 | 4A, 6A Gate Driver Capacitive Coupling 3000Vrms 2 Channel 16-SOIC , Surface Mount , 6.5V ~ 25V , -40°C ~ 150°C (TJ) | Other | NSI6602VA-DSPNR |
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NSI6602VD-DLAMR
NOVOSENSE
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1 | 6A, 8A Gate Driver Capacitive Coupling 1600Vrms 2 Channel 13-LGA (4x4) | Other | NSI6602VD-DLAMR |
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NSI6651ASC-Q1SWR
NOVOSENSE
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1 | 1-CHANNEL ISO SMART GATE DRIVER | Small Outline Packages | NSI6651ASC-Q1SWR |
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NSI6611ASC-DSWR
NOVOSENSE
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1 | 5.7kVRMSwithstand isolation voltage SiCMOSFETs and IGBTsup to 2121Vpk Driver side supply voltage:up to 32VwithUVLO 10Apeak source and sink output current HighCMTI: ±150kV/us 200ns fastresponse time ofDESAT Monitor statusof device on FLT andRDY 80ns typicalpropagation delay 400mAsoftturn off current 30nsmaximum pulsewidthdistortion Internalmiller clamp Active short circuitprotection Operationambienttemperature:-40°C ~125°C RoHS& REACHCompliant Lead-free component, suitabl | Small Outline Packages | NSI6611ASC-DSWR |
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NSI6602VD-Q1SPOR
NOVOSENSE
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1 | Gate Driver Capacitive Coupling 3000Vrms 1 Channel 8-SOIC | Other | NSI6602VD-Q1SPOR |
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NSI6601MC-DSWVR
NOVOSENSE
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1 | Isolated single-channel driver Miller Clamp options (NSI6601MB/MC/WC) Input side supply voltage: 3.1V to 17V Driver side supply voltage: up to 32V with 9V, and 12VUVLO options 5A peak source and sink output current Minimum CMTI: ±150kV/μs 80ns typical propagation delay Operation ambient temperature: -40°C ~125°C RoHS & REACH compliant Lead-free component, suitable for lead-free solderingprofile: 260 °C ,MSL3 | Small Outline Packages | NSI6601MC-DSWVR |
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NSI6622A-DLAR
NOVOSENSE
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1 | High Reliability Isolated Dual-Channel Gate Driver LGA13 | Other | NSI6622A-DLAR |
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