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NSVF6003SB6T1G
onsemi
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1 | High Current (IC = 150 mA); Ultra miniature and thin 6 pin package; Large Collector Dissipation (800 mW); AEC-Q101 qualified and PPAP capable; Pb-Free, Halogen Free and RoHS compliance; High Gain (fT = 7 GHz typ) | SOT23 (6-Pin) | NSVF6003SB6T1G |
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NSVF6001SB6T1G
onsemi
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1 | RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN | NSVF6001SB6T1G |
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NSVF6001SB6
onsemi
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0 | RF Transistor, NPN Single, 12 V, 100 mA, fT = 6.7 GHz | NSVF6001SB6 |
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