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NTD360N65S3H
onsemi
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1 | Typ. RDS(on) = 296 m Ω; 700 V @ TJ = 150°C; Ultra Low Gate Charge (Typ. Qg = 17.5 nC); Low Effective Output Capacitance (Typ. Coss(eff.) = 180 pF); Fast switching performance with robust body diode; 100% Avalanche Tested; RoHS Compliant; Internal Gate Resistance: 0.9 Ω | Other | NTD360N65S3H |
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