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NTGD4167CT1G
onsemi
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1 | Small Size (3 x 3 mm) Dual TSOP-6 Package; Reduced Gate Charge to Improve Switching Response; Idependently Connected Devices to Provides Design Flexibility; Complementary N−Channel and P−Channel MOSFET; Leading Edge Trench Technology for Low On Resistance | SOT23 (6-Pin) | NTGD4167CT1G |
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NTGD4167CT1G
Rochester Electronics LLC
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1 | 2600mA, 30V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 3 X 3 MM, LEAD FREE, CASE 318G-02, TSOP-6 | NTGD4167CT1G |
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NTGD4169FT1G
Rochester Electronics LLC
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1 | 2600mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 318G-02, TSOP-6 | NTGD4169FT1G |
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NTGD4161PT1G
onsemi
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1 | Power Field-Effect Transistor, 1.5A I(D), 30V, 0.16ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | NTGD4161PT1G |
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NTGD4169FT1G
onsemi
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1 | Small Signal Field-Effect Transistor, 2.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | NTGD4169FT1G |
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