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NVBGS1D2N08H
onsemi
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1 | Low RDS(on); Low QG and Compliance; AEC-Q101 Qualified and PPAP Capable; RoHS Compliant | Other | NVBGS1D2N08H |
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NVBGS4D1N15MC
onsemi
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1 | Low RDS (on); Low QG and Capacitance; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant | Other | NVBGS4D1N15MC |
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NVBGS6D5N15MC
onsemi
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1 | Power Field-Effect Transistor, 121A I(D), 150V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | NVBGS6D5N15MC |
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NVBGS1D9N08HT4G
onsemi
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1 | Power Field-Effect Transistor, 256A I(D), 80V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | NVBGS1D9N08HT4G |
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