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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	PD4859J5050S2HF ANAREN	1	Signal Conditioning 4.8-5.9GHz 50 Ohm IL=1.0dB	Other	PD4859J5050S2HF	3D model available Symbol and footprint available 3	1 Download Model
	PD4859L5050S2HF ANAREN	1	Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced	Other	PD4859L5050S2HF	3D model available Symbol and footprint available 3	1 Download Model
	UPD48576209F1-E24-DW1-A Renesas Electronics	1	The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#	BGA	UPD48576209F1-E24-DW1-A	3D model available Symbol and footprint available 3	1 Download Model
	UPD48576218F1-E18-DW1-A Renesas Electronics	1	The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#	BGA	UPD48576218F1-E18-DW1-A	3D model available Symbol and footprint available 3	1 Download Model

	UPD48576236F1-E24-DW1-A Renesas Electronics	1	The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#	BGA	UPD48576236F1-E24-DW1-A	3D model available Symbol and footprint available 3	1 Download Model
	UPD48576236F1-E18-DW1-A Renesas Electronics	1	The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#	BGA	UPD48576236F1-E18-DW1-A	3D model available Symbol and footprint available 3	1 Download Model
	UPD48576218F1-E24-DW1-A Renesas Electronics	1	The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#	BGA	UPD48576218F1-E24-DW1-A	3D model available Symbol and footprint available 3	1 Download Model
	PD4859J5050S2 Anaren Microwave	1	Splitter, 4800MHz Min, 5900MHz Max, 1dB Insertion Loss-Max, 2 X 1.25 MM, 0.50 MM HEIGHT, ROHS COMPLIANT, SUB-MINIATURE, CERAMIC PACKAGE-6		PD4859J5050S2	3D model not available Symbol and footprint not available 0	0 Build or Request
	PD4859L5050S2HF TTM Technologies	1	Splitter, 3000MHz Min, 6200MHz Max, 0.7dB Insertion Loss-Max,		PD4859L5050S2HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	PD4859J5050S2HF TTM Technologies	1	Splitter, 4800MHz Min, 5900MHz Max, 1dB Insertion Loss-Max,		PD4859J5050S2HF	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576218FF-E24-DW1 Renesas Electronics Corporation	1	32MX18 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576218FF-E24-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576218FF-E18-DW1-A Renesas Electronics Corporation	1	32MX18 DDR DRAM, PBGA144, 18.50 X 11, LEAD FREE, FBGA-144		UPD48576218FF-E18-DW1-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD485505G-25-E2 Renesas Electronics Corporation	1	5KX8 OTHER FIFO, 18ns, PDSO24, 11.43 MM, PLASTIC, SOP-24		UPD485505G-25-E2	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD485506G5-35-7JF-A NEC Electronics Group	1	FIFO, 5KX16, 25ns, Synchronous, CMOS, PDSO44, 10.16 MM, LEAD FREE, PLASTIC, TSOP2-44		UPD485506G5-35-7JF-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576109FF-E18-DW1-A Renesas Electronics Corporation	1	64MX9 DDR DRAM, PBGA144, 18.50 X 11, LEAD FREE, FBGA-144		UPD48576109FF-E18-DW1-A	3D model not available Symbol and footprint not available 0	0 Build or Request

	UPD48576118FF-E24-DW1 Renesas Electronics Corporation	1	32MX18 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576118FF-E24-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576118F1-E24-DW1-A Renesas Electronics	1	The µPD48576118F1 is a 33, 554, 432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576118F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK#. These products are suitable for application which require synchronous operation, High-Speed, low voltage, high density and wide bit confi		UPD48576118F1-E24-DW1-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD485505GU-25 Renesas Electronics Corporation	1	IC,FIELD/FRAME/LINE MEMORY,CMOS,SOP,24PIN,PLASTIC		UPD485505GU-25	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576209FF-E33-DW1 Renesas Electronics Corporation	1	64MX9 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576209FF-E33-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576236FF-E25-DW1-A Renesas Electronics Corporation	1	16MX36 DDR DRAM, PBGA144, 18.50 X 11, LEAD FREE, FBGA-144		UPD48576236FF-E25-DW1-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD485506G5-25 NEC Electronics America Inc	1	FIFO, 10KX8, 18ns, Synchronous, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44		UPD485506G5-25	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD485505G-25-A NEC Electronics Group	1	FIFO, 5KX8, 18ns, Synchronous, CMOS, PDSO24, 0.450 INCH, PLASTIC, SOP-24		UPD485505G-25-A	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576109FF-E24-DW1 Renesas Electronics Corporation	1	64MX9 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576109FF-E24-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576109FF-E25-DW1 Renesas Electronics Corporation	1	64MX9 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576109FF-E25-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
	UPD48576218FF-E33-DW1 Renesas Electronics Corporation	1	32MX18 DDR DRAM, PBGA144, 18.50 X 11 MM, UBGA-144		UPD48576218FF-E33-DW1	3D model not available Symbol and footprint not available 0	0 Build or Request
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