PD485 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Signal Conditioning 4.8-5.9GHz 50 Ohm IL=1.0dB Other PD4859J5050S2HF 1 Download Model
Part Image Part Image 1 Ultra Low Profile 0805 Balun 50Ω to 200Ω Balanced Other PD4859L5050S2HF 1 Download Model
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UPD48576209F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576209F1-E24-DW1-A 1 Download Model
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UPD48576236F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E24-DW1-A 1 Download Model
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UPD48576218F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E18-DW1-A 1 Download Model
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UPD48576236F1-E18-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576236F1-E18-DW1-A 1 Download Model
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UPD48576218F1-E24-DW1-A Renesas Electronics
1 The µPD48576209F1 is a 67, 108, 864-word by 9 bit, the µPD48576218F1 is a 33, 554, 432 word by 18 bit and the µPD48576236F1 is a 16, 777, 216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell. The µPD48576209F1, µPD48576218F1 and µPD48576236F1 integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (CK and CK#) are latched on the positive edge of CK and CK# BGA UPD48576218F1-E24-DW1-A 1 Download Model
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PD4859J5050S2 Anaren Microwave
1 Splitter, 4800MHz Min, 5900MHz Max, 1dB Insertion Loss-Max PD4859J5050S2 0 Build or Request
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PD4859L5050S2HF TTM Technologies
1 Splitter, 3000MHz Min, 6200MHz Max, 0.7dB Insertion Loss-Max PD4859L5050S2HF 0 Build or Request
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PD4859L5050S2HF2 TTM Technologies
1 Splitter PD4859L5050S2HF2 0 Build or Request
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PD4859J5050S2HF TTM Technologies
1 Splitter, 4800MHz Min, 5900MHz Max, 1dB Insertion Loss-Max PD4859J5050S2HF 0 Build or Request
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UPD485506G5-35-7JF Renesas Electronics Corporation
1 FIFO, 5KX16, 25ns, Synchronous, CMOS, PDSO44 UPD485506G5-35-7JF 0 Build or Request
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UPD485505G-25-E2 Renesas Electronics Corporation
1 FIFO, 5KX8, 18ns, Synchronous, CMOS, PDSO24 UPD485505G-25-E2 0 Build or Request
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UPD48576118F1-E24-DW1-A Renesas Electronics Corporation
1 DDR DRAM, 32MX18, CMOS, PBGA144 UPD48576118F1-E24-DW1-A 0 Build or Request
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UPD48576109FF-E18-DW1-A Renesas Electronics Corporation
1 DDR DRAM, 64MX9, 0.12ns, CMOS, PBGA144 UPD48576109FF-E18-DW1-A 0 Build or Request
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UPD48576218FF-E24-DW1 Renesas Electronics Corporation
1 DDR1 DRAM, 32MX18, 0.3ns, CMOS, PBGA144 UPD48576218FF-E24-DW1 0 Build or Request
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UPD485506G5-35-7JF-A NEC Electronics Group
1 FIFO, 5KX16, 25ns, Synchronous, CMOS, PDSO44 UPD485506G5-35-7JF-A 0 Build or Request
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UPD48576118F1-E24Y-DW1-A Renesas Electronics Corporation
1 DDR2 DRAM UPD48576118F1-E24Y-DW1-A 0 Build or Request
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UPD48576118FF-E24-DW1 Renesas Electronics Corporation
1 DDR DRAM, 32MX18, 0.2ns, CMOS, PBGA144 UPD48576118FF-E24-DW1 0 Build or Request
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UPD48576218FF-E18-DW1-A Renesas Electronics Corporation
1 DDR1 DRAM, 32MX18, 0.22ns, CMOS, PBGA144 UPD48576218FF-E18-DW1-A 0 Build or Request
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UPD48576109FF-E33-DW1-A Renesas Electronics Corporation
1 DDR DRAM, 64MX9, 0.25ns, CMOS, PBGA144 UPD48576109FF-E33-DW1-A 0 Build or Request
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UPD48576109FF-E25-DW1-A Renesas Electronics Corporation
1 DDR DRAM, 64MX9, 0.2ns, CMOS, PBGA144 UPD48576109FF-E25-DW1-A 0 Build or Request
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UPD485506G5-35 Renesas Electronics Corporation
1 FIFO, 25ns, CMOS, PDSO44 UPD485506G5-35 0 Build or Request
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QT22-LP-D-4-85.000MHZ Q-TECH Corporation
1 PECL Output Clock Oscillator, 8MHz Min, 85MHz Max, 85MHz Nom, ECL QT22-LP-D-4-85.000MHZ 0 Build or Request
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UPD48576118FF-E25-DW1-A Renesas Electronics Corporation
1 DDR DRAM, 32MX18, 0.2ns, CMOS, PBGA144 UPD48576118FF-E25-DW1-A 0 Build or Request
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