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Image	Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
	R1RP0416DSB-2PR#S1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PR#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-0PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#B0 Renesas Electronics	1	Renesas Electronics	Small Outline Packages	R1RP0416DSB-2LR#B0	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PI#D1 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PI#D1	3D model available Symbol and footprint available 3	1 Download Model

	R1RP0416DSB-2LR#S1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#S1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PI#D1 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-0PI#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR Renesas Electronics	1	Renesas Electronics SRAM, R1RP0416DSB-2LR- 4Mbit, 5	Small Outline Packages	R1RP0416DSB-2LR	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PI#S0 Renesas Electronics	1	Asynchonous Fast SRAM	Small Outline Packages	R1RP0416DSB-2PI#S0	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DGE-2PI#B0 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Other	R1RP0416DGE-2PI#B0	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2SR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2SR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2LR#D0 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2LR#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PR#D1 Renesas Electronics	1	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PR#D1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DGE-2PI#B1 Renesas Electronics	1	SRAM Memory IC 4Mbit Parallel 12 ns 44-SOJ\| Surface Mount ,-40°C ~ 85°C (TA)	Other	R1RP0416DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PR#D0 Renesas Electronics	0	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PR#D0	3D model available Symbol and footprint available 3	1 Download Model

	R1RP0416DGE-2PR#B1 Renesas Electronics	0	The R1RP0416D Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Other	R1RP0416DGE-2PR#B1	3D model not available Symbol and footprint available 2	1 Download Model
	R1RP0408DGE-2PI#B1 Renesas Electronics	1	SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ \|-40°C ~ 85°C (TA)	Other	R1RP0408DGE-2PI#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DGE-2PR Renesas Electronics	1	Renesas Electronics SRAM, R1RP0416DGE-2PR- 4Mbit, 5	Other	R1RP0416DGE-2PR	3D model not available Symbol and footprint available 2	1 Download Model
	R1RP0408DGE-2LR#B1 Renesas Electronics	1	SRAM Memory IC 4Mbit Parallel 12 ns 36-SOJ \|0°C ~ 70°C (TA)	Other	R1RP0408DGE-2LR#B1	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-2PI#D0 Renesas Electronics	1	The R1RP0416DI Series is a 4-Mbit High-Speed static RAM organized 256-k word × 16-bit. It has realized High-Speed access time by employing CMOS process (6-transistor memory cell) and High-Speed circuit designing technology. It is most appropriate for the application which requires High-Speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.	Small Outline Packages	R1RP0416DSB-2PI#D0	3D model available Symbol and footprint available 3	1 Download Model
	R1RP0416DSB-0PI Renesas Electronics Corporation	1	Standard SRAM, 256KX16, 10ns, CMOS, PDSO44		R1RP0416DSB-0PI	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1RP0404DGE-2PR Renesas Electronics Corporation	1	Standard SRAM, 1MX4, 12ns, CMOS, PDSO32		R1RP0404DGE-2PR	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1RP0416DSB-2PI Renesas Electronics Corporation	1	Standard SRAM, 256KX16, 12ns, CMOS, PDSO44		R1RP0416DSB-2PI	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1RP0416DSB-2SR Renesas Electronics Corporation	1	SRAM		R1RP0416DSB-2SR	3D model not available Symbol and footprint not available 0	0 Build or Request
	R1RP0416DGE-2SR Renesas Electronics Corporation	1	SRAM		R1RP0416DGE-2SR	3D model not available Symbol and footprint not available 0	0 Build or Request
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