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RFD16N05LSM9A
onsemi
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1 | Can be Driven Directly from CMOS, NMOS, TTL Circuits; Majority Carrier Devicee; UIS SOA Rating Curve (Single Pulse); Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; Nanosecond Switching Speeds; 16A, 50V; High Input Impedance; SOA is Power Dissipation Limited; Linear Transfer Characteristics; Design Optimized for 5V Gate Drives; rDS(ON)= 0.047Ω | Other | RFD16N05LSM9A |
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RFD16N05LSM9A
Intersil Corporation
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1 | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD16N05LSM9A |
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RFD16N05LSM9A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD16N05LSM9A |
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RFD16N05LSM9A
Rochester Electronics LLC
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1 | 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN | RFD16N05LSM9A |
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RFD16N05LSM9A
Harris Semiconductor
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1 | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD16N05LSM9A |
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RFD16N05LSM9A_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD16N05LSM9A_NL |
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