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Image Part Number D.S Description Package Category Prices / Stock Model Action
Part Image Part Image 1 Can be Driven Directly from CMOS, NMOS, TTL Circuits; Majority Carrier Devicee; UIS SOA Rating Curve (Single Pulse); Related Literature  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; Nanosecond Switching Speeds; 16A, 50V; High Input Impedance; SOA is Power Dissipation Limited; Linear Transfer Characteristics; Design Optimized for 5V Gate Drives; rDS(ON)= 0.047Ω Other RFD16N05LSM9A 1 Download Model
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RFD16N05LSM9A Intersil Corporation
1 Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RFD16N05LSM9A 0 Build or Request
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RFD16N05LSM9A Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RFD16N05LSM9A 0 Build or Request
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RFD16N05LSM9A Rochester Electronics LLC
1 16A, 50V, 0.056ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA VARIANT, 3 PIN RFD16N05LSM9A 0 Build or Request
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RFD16N05LSM9A Harris Semiconductor
1 Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RFD16N05LSM9A 0 Build or Request
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RFD16N05LSM9A_NL Fairchild Semiconductor Corporation
1 Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RFD16N05LSM9A_NL 0 Build or Request
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