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RFD3055LESM9A
onsemi
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1 | Peak Current vs Pulse Width Curve; Temperature Compensating PSPICE® Model; Related Literature - TB334 “Guidelines for Soldering Surface MountComponents to PC Boards”; UIS Rating Curve; 11A, 60V; rDS(ON)= 0.107Ω | Other | RFD3055LESM9A |
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RFD3055LESM9A
Intersil Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD3055LESM9A |
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RFD3055LESM9A
Harris Semiconductor
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1 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD3055LESM9A |
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RFD3055LESM9A
Rochester Electronics LLC
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1 | 11A, 60V, 0.107ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252 VARIANT, 3 PIN | RFD3055LESM9A |
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RFD3055LESM9A
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD3055LESM9A |
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RFD3055LESM9A_NL
Fairchild Semiconductor Corporation
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1 | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | RFD3055LESM9A_NL |
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