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CHT-555-CDIL8-T
Cissoid
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1 | PULSAR Series 5 V (-55°C to 225°C) 4.2 Mhz 350 uA 555 Timer - CDIL-8 | Ceramic Dual-In-Line Packages | CHT-555-CDIL8-T |
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CHT-LDNS-055-TO254-T-S1
Cissoid
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1 | Low-Dropout CMOS Voltage Regulator For symmetrical voltage applications | Transistor Outline, Vertical | CHT-LDNS-055-TO254-T-S1 |
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CHT-HYPERION-CSOIC28-T
Cissoid
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1 | HYPERION Series 50 V 1A (-55°C to 225°C) Half Bridge Mosfet Driver- CSOIC-28 | Small Outline Packages | CHT-HYPERION-CSOIC28-T |
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CHT-MAGMA-CSOIC28-T
Cissoid
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1 | MAGMA Series 500 kHz 90% Duty (-55°C to 225°C) PWM Controller - CSOIC-28 | Small Outline Packages | CHT-MAGMA-CSOIC28-T |
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CHT-LDNS-0525-TO254-T
Cissoid
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1 | High-Temperature, Negative Low-Dropout CMOS Voltage Regulator For symmetrical voltage applications | Transistor Outline, Vertical | CHT-LDNS-0525-TO254-T |
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S2A
onsemi
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1 | High-Current Capability, 2 A Rated; Fast Response: 2 μs Trr; Glass Passivated Junction; High-Surge Current Capability, 50 A2s IFSM; Low-Forward Voltage Drop, 1.15 V VF Max at 2 A; UL Certified, UL #E258596; NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable; These Devices are Pb−Free and are RoHS Compliant | Diodes Moulded | S2A |
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ES2AA
Diodes Incorporated
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1 | DIODES INC. - ES2AA - DIODE, RECTIF, S FAST, 2A, 50V, SMA | Diodes Moulded | ES2AA |
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970-008ME20-4S2AT-2
Glenair
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1 | Series 970 PowerTrip™ Connector s and Accessories 970-008 Square Flange PC Tail Receptacle 20-4 4#8 Contacts | Other | 970-008ME20-4S2AT-2 |
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1 | 33 µF ±20% 100V Ceramic Capacitor X7S Stacked SMD, 2 J-Lead | Other | CAA572X7S2A336M640LJ |
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RMQS2A1818DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A1836DGBA is a 524, 288-word by 36-bit and the RMQS2A1818DGBA is a 1, 048, 576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Speed | BGA | RMQS2A1818DGBA-332#AC0 |
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FH80BA-10S2A-0.15SHW(01)
Hirose
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1 | Hirose Electric Receptacle Pitch 0.45 mm Horizontal 0.2 A DC 50.0 V NP 10 -55℃ TO 85℃ | Other | FH80BA-10S2A-0.15SHW(01) |
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WK73S2ATTD2R0J
KOA Speer
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1 | Thick Film Resistors - SMD 2 ohm 5% 1W AEC-Q200 | Resistor Chip | WK73S2ATTD2R0J |
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RMLV0816BGBG-4S2#AC0
Renesas Electronics
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1 | The RMLV0816BGBG is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGBG has realized higher density, higher performance and low power consumption. The RMLV0816BGBG offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48-ball fine pitch ball grid array. | BGA | RMLV0816BGBG-4S2#AC0 |
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RMLV0408EGSA-4S2#AA1
Renesas Electronics
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1 | The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524, 288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP. | Small Outline Packages | RMLV0408EGSA-4S2#AA1 |
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RMQS2A3618DGBA-332#AC0
Renesas Electronics
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1 | The RMQS2A3636DGBA is a 1, 048, 576-word by 36-bit and the RMQS2A3618DGBA is a 2, 097, 152-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, High-Sp | BGA | RMQS2A3618DGBA-332#AC0 |
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RMLV0416EGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0416E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0416E Series has realized higher density, higher performance and low power consumption. The RMLV0416E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II) or 48-ball fine pitch ball grid array. | Small Outline Packages | RMLV0416EGSB-4S2#AA0 |
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59S2AQ-40MT5-A_1
Rosenberger
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1 | RF Connectors / Coaxial Connectors Plug PC-Board SMD Right Angle A Black | Other | 59S2AQ-40MT5-A_1 |
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RMLV0408EGSA-4S2#AA0
Renesas Electronics
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1 | The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524, 288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 32-pin SOP, 32-pin TSOP (II) or 32-pin sTSOP. | Small Outline Packages | RMLV0408EGSA-4S2#AA0 |
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RMLV1616AGBG-5S2#AC0
Renesas Electronics
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1 | The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1, 048, 576-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density, higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin TSOP (II) or 48-ball fine pitch ball grid array. | BGA | RMLV1616AGBG-5S2#AC0 |
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RMLV0816BGSD-4S2#AC0
Renesas Electronics
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1 | The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II). | Small Outline Packages | RMLV0816BGSD-4S2#AC0 |
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RMLV0414EGSB-4S2#AA1
Renesas Electronics
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1 | The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). | Small Outline Packages | RMLV0414EGSB-4S2#AA1 |
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RMLV0808BGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0808BGSB is a family of 8-Mbit static RAMs organized 1, 048, 576-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0808BGSB has realized higher density, higher performance and low power consumption. The RMLV0808BGSB offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II). | Small Outline Packages | RMLV0808BGSB-4S2#AA0 |
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RMLV0816BGSD-4S2#AA1
Renesas Electronics
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1 | The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II). | Small Outline Packages | RMLV0816BGSD-4S2#AA1 |
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RMLV0816BGSA-4S2#AA0
Renesas Electronics
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1 | The RMLV0816BGSA is a family of 8-Mbit static RAMs organized 524, 288-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0816BGSA has realized higher density, higher performance and low power consumption. The RMLV0816BGSA offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I). | Small Outline Packages | RMLV0816BGSA-4S2#AA0 |
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RMLV0414EGSB-4S2#AA0
Renesas Electronics
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1 | The RMLV0414E Series is a family of 4-Mbit static RAMs organized 262, 144-word × 16-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0414E Series has realized higher density, higher performance and low power consumption. The RMLV0414E Series offers low power standby power dissipation;therefore, it is suitable for battery backup systems. It is offered in 44-pin TSOP (II). | Small Outline Packages | RMLV0414EGSB-4S2#AA0 |
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