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Image Part Number D.S Description Package Category Prices / Stock Model Action
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S5BC-13-F Diodes Incorporated
1 Diodes Inc S5BC-13-F Switching Diode, 5A 100V, 2-Pin SMC Diodes Moulded S5BC-13-F 1 Download Model
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70V3569S5BC8 Renesas Electronics
1 The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3569S5BC8 1 Download Model
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70V3569S5BCI8 Renesas Electronics
1 The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3569S5BCI8 1 Download Model
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70V3379S5BC Renesas Electronics
1 The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3379S5BC 1 Download Model
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70V3379S5BCI8 Renesas Electronics
1 The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3379S5BCI8 1 Download Model
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70V3579S5BC8 Renesas Electronics
1 The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3579S5BC8 1 Download Model
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70V3579S5BCI8 Renesas Electronics
1 The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3579S5BCI8 1 Download Model
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70V3579S5BC Renesas Electronics
1 The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3579S5BC 1 Download Model
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70V3569S5BCI Renesas Electronics
1 The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3569S5BCI 1 Download Model
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70V3569S5BC Renesas Electronics
1 The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3569 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3569S5BC 1 Download Model
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70V3579S5BCI Renesas Electronics
1 The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3579S5BCI 1 Download Model
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70V3379S5BCI Renesas Electronics
1 The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3379S5BCI 1 Download Model
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70V3389S5BC8 Renesas Electronics
1 The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3389S5BC8 1 Download Model
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70V3389S5BCI Renesas Electronics
1 The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3389S5BCI 1 Download Model
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70V3379S5BC8 Renesas Electronics
1 The 70V3379 is a high-speed 32K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3379 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3379S5BC8 1 Download Model
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70V3579S5BCGI Renesas Electronics
1 The 70V3579 is a high-speed 32K × 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3579 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3579S5BCGI 1 Download Model
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70V3389S5BCI8 Renesas Electronics
1 The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3389S5BCI8 1 Download Model
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70V3389S5BC Renesas Electronics
1 The 70V3389 is a high-speed 64K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1, permits the on-chip circuitry of each port to enter a very low standby power mode. The 70V3389 can support an operating voltage of either 3.3V or 2.5V on one or both ports, controllable by the OPT pins. The power supply for the core of the device (VDD) is at 3.3V. BGA 70V3389S5BC 1 Download Model
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S5BC-13 Diodes Incorporated
1 Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon S5BC-13 0 Build or Request
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S5BC-KR7G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB S5BC-KR7G 0 Build or Request
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S5BC-7 Diodes Incorporated
1 Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon S5BC-7 0 Build or Request
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S5BC-K Taiwan Semiconductor
1 Rectifier Diode S5BC-K 0 Build or Request
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S5BC-KM6G Taiwan Semiconductor
1 Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB S5BC-KM6G 0 Build or Request
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S5BC-HF Comchip Technology Corporation Ltd
1 Rectifier Diode, 1 Phase, 1 Element, 5A, 100V V(RRM), Silicon, DO-214AB S5BC-HF 0 Build or Request
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P261D-D13BS5BC20K TT Electronics Resistors
1 Potentiometer, Conductive Plastic, 0.25W, 20000ohm, 10% +/-Tol, 1 Turn(s) P261D-D13BS5BC20K 0 Build or Request
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