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SI4501BDY-T1-GE3
Vishay
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1 | MOSFET | Small Outline Packages | SI4501BDY-T1-GE3 |
3
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SI4500BDY-T1-E3
Vishay
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1 | SI4500BDY-T1-E3, Dual N/P-channel MOSFET Transistor 20 V, 8-Pin SOIC | Small Outline Packages | SI4500BDY-T1-E3 |
3
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SI4501ADY-T1-E3
Vishay
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1 | MOSFET, Dual, Complementary, Half-Bridge, 30/-8 V, 5.3/-3.3 A, SO-8 | Small Outline Packages | SI4501ADY-T1-E3 |
3
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NSI45030AT1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified | Small Outline Diode | NSI45030AT1G |
3
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NSI45025ZT1G
onsemi
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1 | Robust Power Package: 1.4 W, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified | SOT223 (3-Pin) | NSI45025ZT1G |
3
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NSI45030T1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified | Small Outline Diode | NSI45030T1G |
3
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NSI45025T1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified | Small Outline Diode | NSI45025T1G |
3
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NSI45020AT1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, UL94-V0 certified, SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable | Small Outline Diode | NSI45020AT1G |
3
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NSI45020JZT1G
onsemi
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1 | Robust Power Package: 1.5 Watts, Adjustable up to 40 mA, Wide Operating Voltage Range, Immediate Turn-On, Voltage Surge Suppressing Protecting LEDs, AEC-Q101 Qualified, SBT (SelfBiased Transistor) Technology, Negative Temperature Coefficient, Eliminates Additional Regulation, These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant. ; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified | SOT223 (3-Pin) | NSI45020JZT1G |
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NSI45020T1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified | Small Outline Diode | NSI45020T1G |
3
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NSI45035JZT1G
onsemi
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1 | Robust Power Package: 1.5 Watts, Adjustable up to 70 mA, Wide Operating Voltage Range, Immediate Turn-On, Voltage Surge Suppressing Protecting LEDs, AEC-Q101 Qualified, SBT (SelfBiased Transistor) Technology, Negative Temperature Coefficient, Eliminates Additional Regulation, These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant. AEC-Q101 Qualified and PPAP Compliant, UL94-V0 certified.; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified | SOT223 (3-Pin) | NSI45035JZT1G |
3
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NSI45015WT1G
onsemi
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1 | Robust power package: 460 mW; Wide operating voltage range, Immediate turn on, voltage surge suppressing protecting LEDs, SBT (Self Biased Transistor) technology, Negative temperature coefficient; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable; These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant | Small Outline Diode | NSI45015WT1G |
3
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NSI45030AZT1G
onsemi
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1 | Robust Power Package: 1.4 W, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device uses Halogen-Free Molding Compound, This is a Pb-Free Device; AEC-Q101 Qualified and PPAP Capable, UL94-V0 Certified | SOT223 (3-Pin) | NSI45030AZT1G |
3
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NSI45090JDT4G
onsemi
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1 | Robust Power Package: 2.7 Watts, Adjustable up to 160 mA, Wide Operating Voltage Range, Immediate Turn-On, Voltage Surge Suppressing - Protecting LEDs, UL94V0 Certified, SBT (SelfBiased Transistor) Technology, Negative Temperature Coefficient, Eliminates Additional Regulation, These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant. ; NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable | Other | NSI45090JDT4G |
3
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NSI45025AT1G
onsemi
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1 | Robust Power Package: 460 mW, Wide operating voltage range, Immediate turn on Voltage surge suppressing protecting LEDs, AEC-Q101 qualified and PPAP Capable, UL94-V0 certified SBT (Self Biased Transistor) Technology, Negative Temperature Coefficient, This device is PB-Free, Halogen Free/BFR Free and is RoHS Compliant; AEC-Q101 Qualified and PPAP Capable, UL94V0 Certified | Small Outline Diode | NSI45025AT1G |
3
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SI4500BDY-T1-GE3
Vishay Siliconix
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1 | Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4500BDY-T1-GE3 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4500BDY
Vishay Intertechnologies
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1 | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.02ohm, 2-Element, N-Channel and P-Channel, Silicon, Trench Mosfet FET | SI4500BDY |
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SI4500BDY-T1
Vishay Siliconix
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1 | Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4500BDY-T1 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4501ADY-T1-E3
Vishay Siliconix
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1 | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4501ADY-T1-E3 |
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SI4500DY
Vishay Intertechnologies
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1 | Small Signal Field-Effect Transistor, 7A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | SI4500DY |
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4500BDY
Vishay Dale
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0 | N/P-CHNL FAST HALF-BRIDGE, 20/-20V, 4.5/ | SI4500BDY |
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SI4500DY
Vishay Siliconix
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1 | Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4500DY |
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SI4500BDY-T1
Vishay Intertechnologies
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1 | Small Signal Field-Effect Transistor, 6.6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | SI4500BDY-T1 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4500BDY-T1-GE3
Vishay Intertechnologies
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1 | Small Signal Field-Effect Transistor, 6.6A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4500BDY-T1-GE3 |
0
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Build or Request | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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SI4500DY-T1
Vishay Siliconix
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1 | Small Signal Field-Effect Transistor, 7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | SI4500DY-T1 |
0
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