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Image Part Number D.S Description Package Category Prices / Stock Model Action
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TK100E10N1 Toshiba
1 Toshiba TK100E10N1 N-channel MOSFET Transistor, 207 A, 100 V, 3-Pin TO-220 Other TK100E10N1 1 Download Model
Part Image Part Image 1 Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V)(2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) Transistor Outline, Vertical TK100E10N1,S1X 1 Download Model
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