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W631GG6MB-11
Winbond
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1 | DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96-Pin VFBGA | BGA | W631GG6MB-11 |
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W631GG6MB11K
Winbond
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1 | 1Gb DDR3 SDRAM 1866MHz VFBGA96 | BGA | W631GG6MB11K |
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W631GG6MB11W
Winbond
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1 | Refresh, Self-Refresh, Auto Self-refresh (ASR) and Partial array self refresh (PASR) Precharged Power Down and Active Power Down Data masks (DM) for write data Programmable CAS Write Latency (CWL) per operating frequency Write Latency WL = AL + CWL Multi purpose register (MPR) for readout a predefined system timing calibration bit sequence System level timing calibration support via write leveling and MPR read pattern ZQ Calibration for output driver and ODT using external reference r | BGA | W631GG6MB11W |
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W631GG6MB11A
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received wit | BGA | W631GG6MB11A |
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W631GG6MB11S
Winbond
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1 | Power Supply: VDD, VDDQ = 1.5V ± 0.075V Double Data Rate architecture: two data transfers per clock cycle Eight internal banks for concurrent operation 8 bit prefetch architecture CAS Latency: 5, 6, 7, 8, 9, 10, 11, 13 and 14 Burst length 8 (BL8) and burst chop 4 (BC4) modes: fixed via mode register (MRS) or selectable OnThe-Fly (OTF) Programmable read burst ordering: interleaved or nibble sequential Bi-directional, differential data strobes (DQS and DQS#) are transmitted / received w | BGA | W631GG6MB11S |
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W631GG6MB11J
Winbond Electronics Corp
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1 | DDR3 DRAM, 64MX16, CMOS, PBGA96 | W631GG6MB11J |
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