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| Image | Part Number | D.S | Description | Package Category | Prices / Stock | Model | Action |
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W9751G8NB-3J
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3J |
3
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W9751G8NB-3I
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3I |
3
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W9751G8NB-3
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3 |
3
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W9751G8NB18J
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB18J |
3
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W9751G8NB25J
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz VFBGA60 | BGA | W9751G8NB25J |
3
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W9751G8NB-18
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-18 |
3
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W9751G8NB18I
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB18I |
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W9751G8NB-25
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-25 |
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W9751G8NB-3W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3W |
3
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W9751G6KB-3K
Winbond
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1 | SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 57.5 ns 84-WBGA (8x12.5) | BGA | W9751G6KB-3K |
3
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W9751G6NB25I
Winbond
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1 | SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 57.5 ns 84-VFBGA (8x12.5) | BGA | W9751G6NB25I |
3
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W9751G6KB18K
Winbond
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1 | 512Mb DDR2 SDRAM 1066MHz WBGA84 | BGA | W9751G6KB18K |
3
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W9751G6NB-25
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz VFBGA84 | BGA | W9751G6NB-25 |
3
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W9751G6NB-18
Winbond
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1 | 512Mb DDR2 SDRAM 1066MHz VFBGA84 | BGA | W9751G6NB-18 |
3
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W9751G6NB25W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G6NB25W |
3
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W9751G6KB-25
Winbond
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1 | IC SDRAM DDR2 512MBIT (32 x 16) 400MHZ 84BGA | BGA | W9751G6KB-25 |
3
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W9751G6NB-25 TR
Winbond
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1 | DRAM Chip DDR2 SDRAM 512Mbit | BGA | W9751G6NB-25 TR |
3
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W9751G8NB25A
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz VFBGA60 | BGA | W9751G8NB25A |
3
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W9751G6KB25K
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz WBGA84 | BGA | W9751G6KB25K |
3
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W9751G8NB25K
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz VFBGA60 | BGA | W9751G8NB25K |
3
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W9751G8NB-3K
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB-3K |
3
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W9751G6KB25W
Winbond
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1 | 512Mb DDR2 SDRAM 800MHz WBGA84 | BGA | W9751G6KB25W |
3
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W9751G6NB18W
Winbond
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1 | DDR2 SDRAM 1066MHz | BGA | W9751G6NB18W |
3
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W9751G8NB18W
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB18W |
3
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W9751G8NB25I
Winbond
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1 | Power Supply: VDD, VDDQ = 1.8 V ± 0.1V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS andDQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK andCLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data | BGA | W9751G8NB25I |
3
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