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X28HC256SIZ-90
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Small Outline Packages | X28HC256SIZ-90 |
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X28HC64JIZ-12T1
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JIZ-12T1 |
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X28HC64J-90
Renesas Electronics
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1 | EEPROM 8K X 8 EEPROM,CMOS,HIGH SPEED,PLCC,COMM TEMP,90NS | Plastic Leaded Chip Carrier | X28HC64J-90 |
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X28HC256JZ-12
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JZ-12 |
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X28HC64JIZ-90
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JIZ-90 |
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X28HC256SI-90
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Small Outline Packages | X28HC256SI-90 |
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X28HC64JZ-70
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JZ-70 |
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X28HC256JIZ-90
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JIZ-90 |
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X28HC64PIZ-90
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Dual-In-Line Packages | X28HC64PIZ-90 |
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X28HC64JZ-12
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JZ-12 |
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X28HC64J-90T1
Renesas Electronics
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1 | EEPROM 8K X 8, CMOS EEPROM,SDP, 32 PLCC,COM.,90NS T&R | Plastic Leaded Chip Carrier | X28HC64J-90T1 |
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X28HC256JIZ-90T1
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JIZ-90T1 |
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X28HC256JZ-90
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JZ-90 |
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X28HC64JZ-70T1
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JZ-70T1 |
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X28HC64JZ-12T1
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JZ-12T1 |
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X28HC256JIZ-15
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JIZ-15 |
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X28HC64SZ-70
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Small Outline Packages | X28HC64SZ-70 |
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X28HC256JIZ-12
Renesas Electronics
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1 | EEPROM Memory IC 256Kbit Parallel 120 ns 32-PLCC (13.97x11.43) | Plastic Leaded Chip Carrier | X28HC256JIZ-12 |
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X28HC256SZ-12
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Small Outline Packages | X28HC256SZ-12 |
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X28HC64JIZ-90T1
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JIZ-90T1 |
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X28HC256JZ-15T1
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JZ-15T1 |
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X28HC64SIZ-70
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Small Outline Packages | X28HC64SIZ-70 |
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X28HC64SIZ-12
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Small Outline Packages | X28HC64SIZ-12 |
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X28HC64JIZ-70T1
Renesas Electronics
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1 | The X28HC64 is an 8k x 8 EEPROM, fabricated with Intersil’s proprietary, high performance, floating gate CMOS technology. Like all Intersil programmable nonvolatile memories, the X28HC64 is a 5V only device. It features the JEDEC approved pinout for byte-wide memories, compatible with industry standard RAMs. The X28HC64 supports a 64-byte page write operation, effectively providing a 32μs/byte write cycle, and enabling the entire memory to be typically written in 0. 25 seconds. The X28HC64 also features DAT | Plastic Leaded Chip Carrier | X28HC64JIZ-70T1 |
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X28HC256JIZ-12T1
Renesas Electronics
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1 | The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24μs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0. 8s. The X28HC256 also features DATA polling and Toggle bit polling, two methods of providing early end of write detection | Plastic Leaded Chip Carrier | X28HC256JIZ-12T1 |
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