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AT45DB081E-SHN-T - Renesas Electronics

Description: The AT45DB081E DataFlash is a member of our System Enhancing class of code and data storage solutions designed with an advanced dual SRAM buffer architecture that makes it the most efficient memory for data logging. It also incorporates a suite of advanced features that save system power, reduce processor overhead, simplify software development, and provide comprehensive data security and integrity options.

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AT45DB081E-SHN-T Details

  • Manufacturer Part Number:

    AT45DB081E-SHN-T

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOIC-W

  • Country Of Origin:

    Taiwan

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.32.00.51

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    5

  • Additional Feature:

    IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE

  • Clock Frequency-Max (fCLK):

    133 MHz

  • Data Retention Time-Min:

    20

  • Endurance:

    100000 Write/Erase Cycles

  • JESD-30 Code:

    R-PDSO-G8

  • JESD-609 Code:

    e4

  • Length:

    5.29 mm

  • Memory Density:

    8388608 bit

  • Memory IC Type:

    FLASH

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    8

  • Number of Words:

    1048576 words

  • Number of Words Code:

    1000000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    1MX8

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOP

  • Package Equivalence Code:

    SOP8,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    SERIAL

  • Peak Reflow Temperature (Cel):

    260

  • Programming Voltage:

    3 V

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    2.16 mm

  • Serial Bus Type:

    SPI

  • Standby Current-Max:

    0.00004 A

  • Supply Current-Max:

    0.016 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    2.3 V

  • Supply Voltage-Nom (Vsup):

    3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    Nickel/Palladium/Gold (Ni/Pd/Au)

  • Terminal Form:

    GULL WING

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Type:

    NOR TYPE

  • Width:

    5.24 mm

  • Write Protection:

    HARDWARE/SOFTWARE

AT45DB081E-SHN-T Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the AT45DB081E-SHN-T is 2.7V to 3.6V.
  • The HOLD pin should be pulled high during power-up and power-down sequences to prevent unwanted data corruption.
  • The AT45DB081E-SHN-T supports up to 100,000 erase cycles.
  • Wear leveling can be implemented by distributing erase cycles across the entire memory space, using techniques such as dynamic wear leveling or static wear leveling.
  • The WP pin is used to prevent accidental writes to the device. When the WP pin is low, the device is in a write-protected state.

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AT45DB081E-SHN-T Overview

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