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CSD19532Q5B - Texas Instruments

Description: 100 V N-Channel NexFET™ Power MOSFET

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CSD19532Q5B Details

  • Manufacturer Part Number:

    CSD19532Q5B

  • Brand Name:

    Texas Instruments

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines, Thailand

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Texas Instruments

  • YTEOL:

    15

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    274 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    100 A

  • Drain-source On Resistance-Max:

    0.0057 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    195 W

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

CSD19532Q5B Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a low-impedance path for the drain and source pins to the thermal pad.
  • Ensure the gate-source voltage (Vgs) is within the recommended range (typically 4.5V to 10V) and the drain-source voltage (Vds) is within the absolute maximum rating (30V).
  • The critical timing parameters include the turn-on and turn-off times (ton and toff), which are typically around 10-20 ns. Ensure the gate driver is capable of meeting these timing requirements.
  • Implement overvoltage protection (OVP) and overcurrent protection (OCP) circuits to prevent damage from voltage spikes and excessive current. Use a voltage regulator and current sense resistors to monitor and limit the current.
  • A high-current, low-output-impedance gate driver such as the UCC37322 or the LM5113 is recommended. Ensure the gate driver can provide the required peak current and has a low output impedance to minimize ringing.

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CSD19532Q5B Overview

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To find more CAD model downloads similar to this part, try a partial part number search, like CSD19, or try a keyword search, such as Power Field-Effect Transistors

About Texas Instruments

Texas Instruments (TI) designs and manufactures semiconductors and integrated circuits for a wide range of applications. The company's product portfolio includes analog chips, which are essential for managing power and signal functions in electronic devices, and embedded processors, which serve as the brains in various systems, enabling functionality in everything from industrial equipment to consumer electronics. TI's innovations in semiconductor technology have made it a leader in the industry.

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Part Image CSD19532Q5BT Texas Instruments

Power Field-Effect Transistor, 100A I(D), 100V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET