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FDG6335N - onsemi

Description: Low gate charge (1.1nC typical); Compact industry standard SC70-6 surface mount package; 0.7A, 20V RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V; High performance trench technology for extremely low RDS(ON)

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FDG6335N Overview

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FDG6335N Alternates

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Image Part Number Model
Part Image FDG6335ND87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Part Image FDG6335N_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET