FDG63 Model Download Search Results

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Image Part Number D.S Description Package Category Prices / Stock Model Action
Image Part Number D.S Description Package Category Prices / Stock Model Action
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FDG6321C onsemi
1 Very small package outline SC70-6. ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). ; P-Ch  -0.41 A, -25 V  RDS(ON) = 1.1 Ω @ VGS= -4.5 V  RDS(ON) = 1.5 Ω @ VGS= -2.7 V; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; N-Ch  0.50 A, 25 V  RDS(ON) = 0.45 Ω @ VGS= 4.5 V  RDS(ON) = 0.60 Ω @ VGS= 2.7 V SOT23 (6-Pin) FDG6321C 1 Download Model
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FDG6316P onsemi
1 Low Gate Charge; RDS(ON) = 650 mΩ @ VGS = -1.8 V; Compact industry standard SC70-6 surface mountpackage; RDS(ON) = 360 mΩ @ VGS = -2.5 V; RDS(ON) = 270 mΩ @ VGS = -4.5 V; High-Performance Trench Technology for Extremelylow RDS(ON) ; -0.7 A, -12 V SOT23 (6-Pin) FDG6316P 1 Download Model
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FDG6303N onsemi
1 25 V, 0.50 A continuous, 1.5 A Peak. ; Compact industry standard SC70-6 surface mount package. ; RDS(ON) = 0.45 Ω @ VGS= 4.5 V, ; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; RDS(ON) = 0.60 Ω @ VGS= 2.7 V. ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). SOT23 (6-Pin) FDG6303N 1 Download Model
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FDG6320C onsemi
1 Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; P-Ch -0.14 A, -25 V, RDS(ON) = 10 Ω @ VGS= -4.5 V, RDS(ON) = 13 Ω @ VGS= -2.7 V. ; Very small package outline SC70-6. ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). ; N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. SOT23 (6-Pin) FDG6320C 1 Download Model
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FDG6306P onsemi
1 RDS(ON) = 630 mΩ @ VGS = –2.5 V ; RDS(ON)= 420 mΩ @ VGS = –4.5 V ; –0.6 A, –20 V. ; Low gate charge ; Compact industry standard SC70-6 surface mountpackage ; High performance trench technology for extremelylow RDS(ON) SOT23 (6-Pin) FDG6306P 1 Download Model
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FDG6324L onsemi
1 Obsolete - Integrated Load Switch SOT23 (6-Pin) FDG6324L 1 Download Model
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FDG6301N onsemi
1 RDS(ON) = 4 Ω @ VGS= 4.5 V, ; Compact industry standard SC70-6 surface mount package. ; 25 V, 0.22 A continuous, 0.65 A Peak. ; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). ; RDS(ON) = 5 Ω @ VGS= 2.7 V. SOT23 (6-Pin) FDG6301N 1 Download Model
Part Image Part Image 1 Last Shipments - Dual N & P Channel Digital FET 25V SOT23 (6-Pin) FDG6318PZ 1 Download Model
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FDG6304P onsemi
1 RDS(ON) = 1.5 Ω @ VGS= -2.7 V. ; Compact industry standard SC70-6 surface mount package. ; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; RDS(ON) = 1.1 Ω @ VGS= -4.5 V, ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). ; -25 V, -0.41 A continuous, -1.5 A Peak. SOT23 (6-Pin) FDG6304P 1 Download Model
Part Image Part Image 1 Compact industry standard SC70-6 surface mountpackage ; RDS(ON) = 500 mΩ @ VGS = 2.5V ; Low gate charge ; RDS(ON) = 400 mΩ @ VGS = 4.5V ; ESD protection diode (note 3) ; High performance trench technology for extremelylow RDS(ON) ; 0.7A, 20V SOT23 (6-Pin) FDG6317NZ 1 Download Model
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FDG6308P onsemi
1 RDS(ON) = 0.80Ω @ VGS = –1.8 V ; RDS(ON)= 0.40Ω @ VGS = –4.5 V ; –0.6 A, –20 V. ; Compact industry standard SC70-6 surface mountpackage ; High performance trench technology for extremelylow RDS(ON) ; RDS(ON) = 0.55Ω @ VGS = –2.5 V ; Low gate charge SOT23 (6-Pin) FDG6308P 1 Download Model
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FDG6332C onsemi
1 SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick); Q1 0.7A, 20V RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V; Low gate charge; Q2 -0.6A, -20V RDS(ON) = 420mΩ @ VGS = -4.5V RDS(ON) = 630mΩ @ VGS = -2.5V; High performance trench technology for extremely low RDS(ON) SOT23 (6-Pin) FDG6332C 1 Download Model
Part Image Part Image 1 Dual 20V N-Channel PowerTrench® MOSFET, 0.7 A, 400 mΩ SOT23 (6-Pin) FDG6317NZ. 1 Download Model
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FDG6304P Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.41A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6304P 0 Build or Request
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FDG6323L Rochester Electronics LLC
1 0.27A BUF OR INV BASED PRPHL DRVR, PDSO6, SC-70, 6 PIN FDG6323L 0 Build or Request
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FDG6316P Rochester Electronics LLC
1 700mA, 12V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN FDG6316P 0 Build or Request
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FDG6302PL99Z Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.14A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6302PL99Z 0 Build or Request
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FDG6323L_NL Fairchild Semiconductor Corporation
1 Buffer/Inverter Based Peripheral Driver, 1 Driver, 0.36A, MOS, PDSO6 FDG6323L_NL 0 Build or Request
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FDG6318P Rochester Electronics LLC
1 500mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN FDG6318P 0 Build or Request
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FDG6322C onsemi
1 Small Signal Field-Effect Transistor, 0.22A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6322C 0 Build or Request
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FDG6321C_NL Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6321C_NL 0 Build or Request
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FDG6302P Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.14A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6302P 0 Build or Request
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FDG6331L Rochester Electronics LLC
1 BUF OR INV BASED PRPHL DRVR, PDSO6, SC-70, SMT-6 FDG6331L 0 Build or Request
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FDG6316P Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6316P 0 Build or Request
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FDG6332C_NL Fairchild Semiconductor Corporation
1 Small Signal Field-Effect Transistor, 0.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET FDG6332C_NL 0 Build or Request
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