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FDG6332C - onsemi

Description: SC70-60 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick); Q1 0.7A, 20V RDS(ON) = 300mΩ @ VGS = 4.5V RDS(ON) = 400mΩ @ VGS = 2.5V; Low gate charge; Q2 -0.6A, -20V RDS(ON) = 420mΩ @ VGS = -4.5V RDS(ON) = 630mΩ @ VGS = -2.5V; High performance trench technology for extremely low RDS(ON)

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FDG6332C - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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FDG6332C - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
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FDG6332C Details

  • Manufacturer Part Number:

    FDG6332C

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.7 A

  • Drain-source On Resistance-Max:

    0.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL AND P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG6332C Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FDG6332C can withstand is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor (e.g., 1 kΩ) and a capacitor (e.g., 100 nF) in parallel. This helps to stabilize the gate voltage and prevent oscillations.
  • To minimize EMI, use a multi-layer PCB with a solid ground plane, and place the FDG6332C near the edge of the board. Keep the drain and source pins as close as possible to minimize inductance. Use a Kelvin connection for the source pin to reduce parasitic inductance.
  • Yes, the FDG6332C is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the PCB layout is optimized for high-frequency operation, and consider using a gate driver with a high current capability to minimize switching losses.
  • Use a voltage clamp or a zener diode to protect the FDG6332C from overvoltage conditions. For overcurrent protection, consider using a current sense resistor and a comparator to detect excessive current. You can also use a dedicated overcurrent protection IC for more advanced protection.

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FDG6332C Overview

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Part Image FDG6332C Fairchild Semiconductor Corporation

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