Part Image

FDG6304P - onsemi

Description: RDS(ON) = 1.5 Ω @ VGS= -2.7 V. ; Compact industry standard SC70-6 surface mount package. ; Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). ; RDS(ON) = 1.1 Ω @ VGS= -4.5 V, ; Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) <1.5 V). ; -25 V, -0.41 A continuous, -1.5 A Peak.

Download FDG6304P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDG6304P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
click to zoom
3D Models
FDG6304P - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
click to zoom

FDG6304P Details

  • Manufacturer Part Number:

    FDG6304P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    0.41 A

  • Drain-source On Resistance-Max:

    1.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG6304P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDG6304P is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Refer to the application note for specific biasing configurations.
  • Use a compact, symmetrical layout with short, wide traces to minimize parasitic inductance. Keep the drain and source pins as close as possible to the PCB's ground plane. Refer to the application note for specific layout guidelines.
  • Handle the device by the body, not the leads. Use an ESD wrist strap or mat, and ensure the workspace is ESD-protected. Store the device in an anti-static bag or tube when not in use.
  • The maximum allowable power dissipation for the FDG6304P is 2.5 W. Ensure the device is properly heat-sinked and follow the thermal management guidelines in the datasheet.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDG6304P Overview

Use the download button to access the FDG6304P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDG63, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDG6304P

Showing 0 results

FDG6304P Alternates

Showing results

Image Part Number Model
Part Image FDG6304P Rochester Electronics LLC

410mA, 25V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN

Part Image FDG6304PL99Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.41A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image FDG6304PD87Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.41A I(D), 25V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET