Part Image

FDG6316P - onsemi

Description: Low Gate Charge; RDS(ON) = 650 mΩ @ VGS = -1.8 V; Compact industry standard SC70-6 surface mountpackage; RDS(ON) = 360 mΩ @ VGS = -2.5 V; RDS(ON) = 270 mΩ @ VGS = -4.5 V; High-Performance Trench Technology for Extremelylow RDS(ON) ; -0.7 A, -12 V

Download FDG6316P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDG6316P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
click to zoom
3D Models
FDG6316P - onsemi  - 3D model - SOT23 (6-Pin) - SC-88 SC70-6 CASE 419B-02 ISSUE Y
click to zoom

FDG6316P Details

  • Manufacturer Part Number:

    FDG6316P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Manufacturer Package Code:

    419B-02

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    12 V

  • Drain Current-Max (ID):

    0.7 A

  • Drain-source On Resistance-Max:

    0.27 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG6316P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDG6316P is -40°C to 150°C.
  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and connect the source to a voltage source or ground through a resistor. Refer to the application note for specific biasing recommendations.
  • To minimize thermal resistance, use a thermal pad on the PCB, and ensure good thermal conductivity between the device and the PCB. A heat sink or thermal interface material can also be used to improve heat dissipation.
  • To protect the FDG6316P from ESD, handle the device with an anti-static wrist strap or mat, and ensure the PCB is designed with ESD protection in mind, such as using ESD protection diodes or resistors.
  • The maximum current rating for the FDG6316P is 16A, but this can vary depending on the specific application and operating conditions. Refer to the datasheet for more information.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDG6316P Overview

Use the download button to access the FDG6316P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDG63, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDG6316P

Showing 0 results

FDG6316P Alternates

Showing results

Image Part Number Model
Part Image FDG6316P Rochester Electronics LLC

700mA, 12V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 6 PIN

Part Image FDG6316P_NL Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.7A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET