Part Image

FDG6306P - onsemi

Description: RDS(ON) = 630 mΩ @ VGS = –2.5 V ; RDS(ON)= 420 mΩ @ VGS = –4.5 V ; –0.6 A, –20 V. ; Low gate charge ; Compact industry standard SC70-6 surface mountpackage ; High performance trench technology for extremelylow RDS(ON)

Download FDG6306P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FDG6306P - onsemi PCB footprint - SOT23 (6-Pin) - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y_2020
click to zoom
3D Models
FDG6306P - onsemi  - 3D model - SOT23 (6-Pin) - SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y_2020
click to zoom

FDG6306P Details

  • Manufacturer Part Number:

    FDG6306P

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-88-6 / SC-70-6 / SOT-363-6

  • Package Description:

    SC-70, 6 PIN

  • Manufacturer Package Code:

    419B-02

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    0.6 A

  • Drain-source On Resistance-Max:

    0.42 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-G6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    0.3 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDG6306P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FDG6306P is -40°C to 150°C.
  • To ensure proper biasing, connect the gate pin to a voltage source through a resistor, and connect the source pin to a voltage source or ground through a resistor. Refer to the application note for specific biasing recommendations.
  • The maximum current rating for the FDG6306P is 6.5A. However, this rating may vary depending on the specific application and operating conditions.
  • To protect the FDG6306P from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or container.
  • For optimal performance, use a multi-layer PCB with a solid ground plane, and keep the drain and source pins as close as possible to minimize inductance. Refer to the application note for specific layout recommendations.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FDG6306P Overview

Use the download button to access the FDG6306P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FDG63, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to FDG6306P

Showing 0 results

FDG6306P Alternates

Showing results

Image Part Number Model
Part Image FDG6306P Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET