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FDMB3900AN - onsemi

Description: Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 7.0 A ; High performance trench technology for extremely low rDS(on) ; Max rDS(on) = 33 mΩ at VGS = 4.5 V, ID = 5.5 A ; High power and current handling capability ; Fast switching speed ; RoHS Compliant; Low gate charge

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PCB Footprints
FDMB3900AN - onsemi PCB footprint - Other - Other - FDMB3900AN-3
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FDMB3900AN - onsemi  - 3D model - Other - FDMB3900AN-3
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FDMB3900AN Details

  • Manufacturer Part Number:

    FDMB3900AN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    WDFN-8

  • Package Description:

    3 X 1.90 MM, ROHS COMPLIANT, MICROFET-6

  • Manufacturer Package Code:

    511CW

  • Country Of Origin:

    Thailand

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Additional Feature:

    ULTRA-LOW RESISTANCE

  • Case Connection:

    DRAIN

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    25 V

  • Drain Current-Max (ID):

    7 A

  • Drain-source On Resistance-Max:

    0.023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    215 pF

  • JESD-30 Code:

    R-PDSO-N6

  • JESD-609 Code:

    e4

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1.6 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FDMB3900AN Frequently Asked Questions (FAQs)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.
  • The device requires a stable input voltage (VIN) and a bias voltage (VBIAS) to operate correctly. Ensure VIN is within the recommended range (4.5V to 18V) and VBIAS is set to 5V ± 10%.
  • The maximum power dissipation for the FDMB3900AN is 2.5W. Ensure the device is properly heat-sinked and the ambient temperature is within the recommended range (-40°C to 150°C) to prevent overheating.
  • Handle the device by the body or use an anti-static wrist strap to prevent ESD damage. Ensure the PCB has ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from external ESD events.
  • The FDMB3900AN is designed to operate at frequencies up to 1 GHz. However, the optimal operating frequency range depends on the specific application and should be determined through characterization and testing.

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FDMB3900AN Overview

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