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FDS6699S - onsemi

Description: 100% RG (Gate Resistance) tested; Includes SyncFET Schottky body diode; RDS(ON) = 4.5 mΩ @ VGS = 4.5V; High power and current handling capability; RDS(ON) = 3.6 mΩ @ VGS = 10V; High performance trench technology for extremely low RDS(ON) and fast switching; 21A, 30V

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FDS6699S - onsemi

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