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FQA6N90C-F109 - onsemi

Description: Low Crss ( Typ. 11pF); 100% Avalanche Tested; RoHS compliant; Low Gate Charge ( Typ. 30nC); 6A, 900V RDS(on) = 2.3Ω(Max.) @VGS = 10 V, ID = 3A

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Part Image FQA6N90C_F109 onsemi

N-Channel QFET® MOSFET 900V, 6A, 2.3Ω, TO-3PN 3L, 3600-RAIL

Part Image FQA6N90C Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET