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FQA6N90C_F109 - onsemi

Description: Trans MOSFET N-CH 900V 6A 3-Pin TO-3P

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FQA6N90C_F109 - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-3PN_1
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FQA6N90C_F109 - onsemi  - 3D model - Transistor Outline, Vertical - TO-3PN_1
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FQA6N90C_F109 Details

  • Manufacturer Part Number:

    FQA6N90C_F109

  • Brand Name:

    ON Semiconductor

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    FLANGE MOUNT, R-PSFM-T3

  • Manufacturer Package Code:

    TO3PN03A

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    58 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    650 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    2.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    198 W

  • Pulsed Drain Current-Max (IDM):

    24 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQA6N90C_F109 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the FQA6N90C-F109 can withstand is 150°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
  • The recommended gate drive voltage for the FQA6N90C-F109 is between 10V and 15V, with a maximum of 20V.
  • Yes, the FQA6N90C-F109 can be used in a parallel configuration, but it's essential to ensure that the devices are matched and the gate drive signals are synchronized to prevent uneven current sharing.
  • To protect the FQA6N90C-F109 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and consider adding overcurrent protection such as a fuse or a current sense resistor.

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FQA6N90C_F109 Overview

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Part Image FQA6N90C-F109 onsemi

Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-3P, TO-3PN 3L, 450-TUBE

Part Image FQA6N90C Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 6A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET