Part Image

FQB22P10TM - onsemi

Description: 175°C maximum junction temperature rating; Low Crss ( Typ. 160pF); -22A, -100V, RDS(on) =125mΩ(Max.) @VGS = -10 V, ID = -11A; Low gate charge ( Typ.40nC); 100% avalanche tested

Download FQB22P10TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQB22P10TM - onsemi PCB footprint - Other - Other - D2PAK_2024
click to zoom
3D Models
FQB22P10TM - onsemi  - 3D model - Other - D2PAK_2024
click to zoom

FQB22P10TM Details

  • Manufacturer Part Number:

    FQB22P10TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Package Description:

    D3PAK-3/2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    9 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.6

  • Avalanche Energy Rating (Eas):

    710 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    22 A

  • Drain-source On Resistance-Max:

    0.125 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    245

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    88 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQB22P10TM Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the FQB22P10TM is -40°C to 150°C.
  • To ensure proper biasing, follow the recommended voltage and current ratings specified in the datasheet, and ensure the device is operated within the recommended operating conditions.
  • For optimal thermal performance, use a multi-layer PCB with a thermal pad connected to a heat sink or a thermal interface material. Ensure good thermal conductivity and minimal thermal resistance.
  • Handle the device with ESD-protective equipment, and ensure the PCB design includes ESD protection circuits and components, such as TVS diodes or ESD protection arrays.
  • The FQB22P10TM is designed to meet the reliability standards of the automotive industry, with a typical lifespan of 10-15 years or more, depending on operating conditions and usage.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQB22P10TM Overview

Use the download button to access the FQB22P10TM schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like FQB22, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQB22P10TM

Showing 0 results

FQB22P10TM Alternates

Showing results

Image Part Number Model
Part Image FQB22P10 Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image FQB22P10TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB