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FQD2N80TM - onsemi

Description: 1.8A, 800V, RDS(on) = 6.3Ω(Max.) @VGS = 10 V, ID = 0.9A; Low gate charge ( Typ. 12nC); 100% avalanche tested; RoHS compliant; Low Crss ( Typ. 5.5pF)

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FQD2N80TM Overview

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Parts related to FQD2N80TM

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FQD2N80TM Alternates

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Image	Part Number	Model
	FQD2N80TF Rochester Electronics LLC 1.8A, 800V, 6.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
	FQB2N80TM Rochester Electronics LLC 2.4A, 800V, 6.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
	FQD2N80TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
	FQD2N80TF Fairchild Semiconductor Corporation Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
For a full list of alternate parts for FQD2N80TM, check out Findchips.com