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FQD5P10TM - Rochester Electronics LLC

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Image Part Number Model
Part Image FQD5P10TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P10TM onsemi

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P10TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P10 onsemi

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA