Part Image

FQD5P10TM - onsemi

Description: Low gate charge ( Typ. 6.3nC); 100% avalanche tested; -3.6A, -100V, RDS(on) = 1.05Ω(Max.) @VGS = -10 V, ID = -1.8A; Low Crss ( Typ. 18pF)

Download FQD5P10TM Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
FQD5P10TM - onsemi PCB footprint - Other - Other - DPAK3 (TO−252 3 LD) CASE 369AS ISSUE O__
click to zoom

FQD5P10TM Details

  • Manufacturer Part Number:

    FQD5P10TM

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    DPAK-3 / TO-252-3

  • Package Description:

    DPAK-3

  • Manufacturer Package Code:

    369AS

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    55 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    3.6 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    25 W

  • Pulsed Drain Current-Max (IDM):

    14.4 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

FQD5P10TM Frequently Asked Questions (FAQs)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This layout helps to dissipate heat efficiently and reduces thermal resistance.
  • Ensure that the device is operated within the recommended temperature range (TJ = -40°C to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.
  • A gate drive voltage of 10-15V is recommended for optimal switching performance. This ensures that the device is fully enhanced and minimizes switching losses.
  • Use a voltage regulator or a TVS diode to protect the device from overvoltage conditions. Implement overcurrent protection using a fuse or a current sense resistor with a comparator circuit.
  • A dead time of 100-200 ns is recommended to minimize shoot-through current. This ensures that the high-side and low-side devices are not conducting simultaneously, reducing losses and improving efficiency.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

FQD5P10TM Overview

Use the download button to access the FQD5P10TM schematic symbol and PCB footprint.
To find more CAD model downloads similar to this part, try a partial part number search, like FQD5P, or try a keyword search, such as Power Field-Effect Transistors

Parts related to FQD5P10TM

Showing 0 results

FQD5P10TM Alternates

Showing results

Image Part Number Model
Part Image FQD5P10TM Rochester Electronics LLC

3.6A, 100V, 1.05ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Part Image FQD5P10TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P10TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD5P10 onsemi

Power Field-Effect Transistor, 3.6A I(D), 100V, 1.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA