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FQD6N25TM - Rochester Electronics LLC

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Part Image FQD6N25TM Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD6N25TF Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image FQD6N25TM onsemi

Power Field-Effect Transistor, 4.4A I(D), 250V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252