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FQT13N06TF Overview

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IRLL014N Infineon Technologies AG

Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

IRLL014NTR Infineon Technologies AG

Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

FQT13N06L onsemi

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

FQT13N06L99Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FQT13N06LL99Z Fairchild Semiconductor Corporation

Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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Image	Part Number	Model
	IRLL014N Infineon Technologies AG Power Field-Effect Transistor, 2.8A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	IRLL014NTR Infineon Technologies AG Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	FQT13N06L onsemi Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
	FQT13N06L99Z Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
	FQT13N06LL99Z Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
For a full list of alternate parts for FQT13N06TF, check out Findchips.com

FQT13N06TF - onsemi

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