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IRF1010EZPBF - Infineon

Description: 60V SINGLE N-CHANNEL HEXFET POWER MOSFET, EA

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IRF1010EZPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB--
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IRF1010EZPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB--
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IRF1010EZPBF Details

  • Manufacturer Part Number:

    IRF1010EZPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    99 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0085 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    200 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    140 W

  • Pulsed Drain Current-Max (IDM):

    340 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF1010EZPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF1010EZPBF is -55°C to 175°C.
  • To ensure reliability, ensure proper thermal management, use a suitable heat sink, and follow the recommended PCB layout and assembly guidelines.
  • The recommended gate drive voltage for the IRF1010EZPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF1010EZPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper layout and decoupling to minimize parasitic inductance and capacitance.
  • Handle the device with ESD-protective equipment, and ensure proper grounding and shielding during assembly and testing.

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Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB