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IRF5305SPBF - Infineon

Description: INFINEON - IRF5305SPBF - Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-263 (D2PAK), Surface Mount

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IRF5305SPBF - Infineon PCB footprint - Other - Other - IRF5305SPBF-2022
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IRF5305SPBF Details

  • Manufacturer Part Number:

    IRF5305SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    LEAD FREE, PLASTIC, D2PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    280 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    31 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF5305SPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF5305SPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRF5305SPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF5305SPBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency range and follow proper PCB layout and design guidelines.
  • Handle the device with proper ESD precautions, such as using an ESD wrist strap or mat, and ensure that the device is stored in an ESD-protected environment.

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IRF5305SPBF Overview

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IRF5305SPBF Alternates

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Part Image IRF5305STRLPBF Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Part Image IRF5305S International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Part Image IRF5305SPBF International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF5305STRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRF5305STRL International Rectifier

Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

For a full list of alternate parts for IRF5305SPBF, check out Findchips.com