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IRFL4315TRPBF - Infineon

Description: International Rectifier IRFL4315TRPBF N-channel MOSFET Module, 2.6 A, 150 V, 4-Pin SOT-223

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PCB Footprints
IRFL4315TRPBF - Infineon PCB footprint - SOT223 (3-Pin) - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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3D Models
IRFL4315TRPBF - Infineon  - 3D model - SOT223 (3-Pin) - SOT-223 (TO-261AA)
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IRFL4315TRPBF Details

  • Manufacturer Part Number:

    IRFL4315TRPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-223, 3 PIN

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.97

  • Avalanche Energy Rating (Eas):

    38 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    2.6 A

  • Drain-source On Resistance-Max:

    0.185 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-261AA

  • JESD-30 Code:

    R-PSSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    2.8 W

  • Pulsed Drain Current-Max (IDM):

    21 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFL4315TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFL4315TRPBF is -55°C to 175°C.
  • The recommended storage temperature range for the IRFL4315TRPBF is -55°C to 150°C.
  • The maximum power dissipation for the IRFL4315TRPBF is 78W at a case temperature of 25°C.
  • The thermal resistance from junction to case (RθJC) for the IRFL4315TRPBF is 0.5°C/W.
  • Yes, the IRFL4315TRPBF is RoHS compliant, meaning it meets the European Union's Restriction of Hazardous Substances directive.

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Part Image IRFL4315TRPBF International Rectifier

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

Part Image IRFL4315 International Rectifier

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA