Part Image

IRFS4227PBF - Infineon

Description: MOSFET N-CH 200V 62A D2PAK

Download IRFS4227PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFS4227PBF - Infineon PCB footprint - Other - Other - IRFS4227PBF-1
click to zoom
3D Models
IRFS4227PBF - Infineon  - 3D model - Other - IRFS4227PBF-1
click to zoom

IRFS4227PBF Details

  • Manufacturer Part Number:

    IRFS4227PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    62 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFS4227PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFS4227PBF is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended operating conditions.
  • Use a multi-layer PCB with a solid ground plane, keep the layout symmetrical, and use shielding to minimize EMI. Consult the application note AN2013-01 for more information.
  • Yes, the IRFS4227PBF is suitable for high-frequency switching applications up to 1 MHz. However, ensure proper PCB layout and decoupling to minimize ringing and oscillations.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit to prevent damage to the device. Consult the application note AN2013-02 for more information.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFS4227PBF Overview

Use the download button to access the IRFS4227PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFS4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFS4227PBF

Showing 0 results

IRFS4227PBF Alternates

Showing results

Image Part Number Model
Part Image IRFS4227TRRPBF Infineon Technologies AG

Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image IRFS4227PBF International Rectifier

Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET