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IRFU120NPBF - Infineon

Description: MOSFET N-Channel 100V 9.4A IPAK International Rectifier IRFU120NPBF N-channel MOSFET Transistor, 9.4 A, 100 V, 3-Pin IPAK

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IRFU120NPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 3 pins
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IRFU120NPBF - Infineon  - 3D model - Transistor Outline, Vertical - 3 pins
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IRFU120NPBF Details

  • Manufacturer Part Number:

    IRFU120NPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    91 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    9.4 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    42 W

  • Pulsed Drain Current-Max (IDM):

    38 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRFU120NPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRFU120NPBF is -55°C to 175°C.
  • The recommended PCB footprint for the IRFU120NPBF is a 5x6mm pad with a 0.5mm thermal via.
  • Yes, the IRFU120NPBF is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive and industrial systems.
  • The maximum allowed voltage for the IRFU120NPBF is 100V.
  • To ensure proper cooling, a thermal interface material (TIM) should be used between the device and the heat sink, and the heat sink should be designed to provide adequate airflow.

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Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

Part Image IRFU120N Infineon Technologies AG

Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA