Part Image

IRFZ44EPBF - Infineon

Description: N-channel MOSFET,IRFZ44E 48A 60V

Download IRFZ44EPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRFZ44EPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3pin
click to zoom
3D Models
IRFZ44EPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB 3pin
click to zoom

IRFZ44EPBF Details

  • Manufacturer Part Number:

    IRFZ44EPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Qualification Status:

    Not Qualified

  • Terminal Finish:

    Tin (Sn)

IRFZ44EPBF Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRFZ44EPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. For the IRFZ44EPBF, the SOA is typically limited by the maximum drain-source voltage (Vds) and drain current (Id). Refer to the datasheet for specific SOA curves.
  • To ensure proper thermal management, ensure the device is mounted on a suitable heat sink with a thermal interface material (TIM) to reduce thermal resistance. The heat sink should be designed to dissipate the maximum expected power loss. Additionally, ensure good airflow around the device and heat sink.
  • The recommended gate drive voltage for the IRFZ44EPBF is typically between 10V to 15V, with a maximum gate-source voltage (Vgs) of ±20V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency.
  • Yes, the IRFZ44EPBF is suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching characteristics, such as rise and fall times, should be considered to ensure optimal performance and minimize losses.
  • To protect the IRFZ44EPBF from overvoltage and overcurrent, consider using a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRFZ44EPBF Overview

Use the download button to access the IRFZ44EPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRFZ4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRFZ44EPBF

Showing 0 results

IRFZ44EPBF Alternates

Showing results

Image Part Number Model
Part Image IRFZ44E International Rectifier

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ44EPBF International Rectifier

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRFZ44E Infineon Technologies AG

Power Field-Effect Transistor, 48A I(D), 60V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB