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IRG4BC40SPBF - Infineon

Description: Infineon IRG4BC40SPBF IGBT, 60 A 600 V, 3-Pin TO-220AB

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PCB Footprints
IRG4BC40SPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
IRG4BC40SPBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB
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IRG4BC40SPBF Details

  • Manufacturer Part Number:

    IRG4BC40SPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Date Of Intro:

    1997-04-17

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE

  • Fall Time-Max (tf):

    570 ns

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    160 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1940 ns

  • Turn-on Time-Nom (ton):

    44 ns

IRG4BC40SPBF Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the IRG4BC40SPBF is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation.
  • To ensure proper cooling, make sure to provide a sufficient heat sink, apply a thermal interface material (TIM) between the device and heat sink, and ensure good airflow around the heat sink. The datasheet provides thermal resistance values to help with thermal design.
  • The recommended gate drive voltage for the IRG4BC40SPBF is between 10V and 15V. However, the datasheet specifies a maximum gate-source voltage of ±20V, so ensure your gate drive circuitry stays within this range.
  • Yes, the IRG4BC40SPBF is suitable for high-frequency switching applications. However, be aware of the device's switching losses, which increase with frequency. Ensure your design takes into account the device's switching characteristics and thermal limitations.
  • To protect the IRG4BC40SPBF from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. The datasheet provides guidelines for overvoltage protection, and you can also consider using external protection devices like TVS diodes or MOVs.

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